IRF6702M2DTR1PBF International Rectifier, IRF6702M2DTR1PBF Datasheet - Page 5
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IRF6702M2DTR1PBF
Manufacturer Part Number
IRF6702M2DTR1PBF
Description
MOSFET N-CH 30V 15A DL DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF6702M2DTRPBF.pdf
(10 pages)
Specifications of IRF6702M2DTR1PBF
Input Capacitance (ciss) @ Vds
1380pF @ 15V
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6.6 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
2.35V @ 25µA
Gate Charge (qg) @ Vgs
14nC @ 4.5V
Power - Max
2.7W
Mounting Type
Surface Mount
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF6702M2DTR1P
IRF6702M2DTR1P
IRF6702M2DTR1P
Fig 14. Typ. Forward Transconductance vs. Drain Current
Fig 10. Typical Source-Drain Diode Forward Voltage
Fig 12. Maximum Drain Current vs. Case Temperature
www.irf.com
1000
100
80
60
40
20
50
40
30
20
10
10
0
0
1
0
25
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0
T J = 175°C
T J = 25°C
T J = -40°C
50
V SD , Source-to-Drain Voltage (V)
I D ,Drain-to-Source Current (A)
T C , Case Temperature (°C)
10
75
V DS = 15V
380µs PULSE WIDTH
100
20
T J = 25°C
125
T J = 175°C
30
V GS = 0V
150
175
40
Fig 15. Maximum Avalanche Energy vs. Drain Current
IRF6702M2DTR/TR1PbF
1000
Fig 13. Typical Threshold Voltage vs. Junction
100
3.0
2.5
2.0
1.5
1.0
0.5
300
250
200
150
100
0.1
10
50
1
0
-75 -50 -25 0
Fig 11. Maximum Safe Operating Area
0
25
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 25µA
I D = 250µA
I D = 1.0mA
I D = 1.0A
Starting T J , Junction Temperature (°C)
V DS , Drain-to-Source Voltage (V)
50
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
Temperature
75
1
25 50 75 100 125 150 175 200
DC
100
1msec
10msec
100µsec
TOP
BOTTOM 12A
125
10
150
I D
1.9A
3.0A
100
175
5