IRF6702M2DTR1PBF International Rectifier, IRF6702M2DTR1PBF Datasheet

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IRF6702M2DTR1PBF

Manufacturer Part Number
IRF6702M2DTR1PBF
Description
MOSFET N-CH 30V 15A DL DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF6702M2DTRPBF.pdf (10 pages)

Specifications of IRF6702M2DTR1PBF

Input Capacitance (ciss) @ Vds
1380pF @ 15V
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6.6 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
2.35V @ 25µA
Gate Charge (qg) @ Vgs
14nC @ 4.5V
Power - Max
2.7W
Mounting Type
Surface Mount
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF6702M2DTR1P
IRF6702M2DTR1P
Applications
l
Features
l
l
l
l
l
l
l
l
Applicable DirectFET Outline and Substrate Outline
Description
The IRF6702M2DPbF combines two MOSFET switches optimized for high side applications into a single medium can DirectFET package.
The switches have low gate resistance and low charge along with ultra low package inductance providing significant reduction in switching
losses. The reduced losses make this product ideal for high efficiency multiphase DC-DC converters that power the latest generation of
processors operating at higher frequencies.
The IRF6702M2DPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
achieve the highest power density for two MOSFETs in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The
DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by
80%.

‚
ƒ
V
V
I
I
I
I
E
I
www.irf.com
Absolute Maximum Ratings (each die operating consecutively)
D
D
D
DM
AR
DS
GS
AS
100% Rg tested
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
Dual Common Drain Control MOSFETs for
Multiphase DC-DC Converters
Replaces Two discrete high side MOSFETs
Optimized for High Frequency Switching
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Ultra Low Package Inductance
Compatible with existing Surface Mount
Techniques
RoHS Compliant and
@ T
@ T
@ T
S1
A
A
C
25
20
15
10
5
0
= 25°C
= 70°C
= 25°C
Fig 1. Typical On-Resistance vs. Gate Voltage
2
4
S2
V GS, Gate -to -Source Voltage (V)
6
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
8
SB
T J = 25°C
10
12
T J = 125°C
14
Ãg
g
16
Parameter
I D = 15A
GS
GS
GS
M2
18
@ 10V
@ 10V
@ 10V
h

20
f
M4
„
…
†
30V max ±20V max 5.2mΩ@ 10V 8.6mΩ@ 4.5V
Q
9.4nC
T
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
V
IRF6702M2DTR1PbF
g tot
C
DSS
14.0
12.0
10.0
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
measured with thermocouple mounted to top (Drain) of part.
8.0
6.0
4.0
2.0
0.0
IRF6702M2DTRPbF
MA
0
J
3.3nC
= 25°C, L = 0.99mH, R
I D = 12A
Q
gd
V
GS
DirectFET™ Power MOSFET ‚
5
L4
G1
Q G Total Gate Charge (nC)
S1
1.2nC
Q
G2
gs2
S2
10
Max.
130
±20
30
15
13
47
71
12
V DS = 24V
V DS = 15V
R
L6
DS(on)
G
17nC
Q
= 25Ω, I
rr
15
DirectFET™ ISOMETRIC
AS
6.3nC
L8
Q
= 12A.
oss
20
TM
R
packaging to
DS(on)
07/21/2010
Units
V
mJ
1.8V
V
A
A
gs(th)
25
1

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IRF6702M2DTR1PBF Summary of contents

Page 1

... Click on this section to link to the appropriate technical paper. ‚ Click on this section to link to the DirectFET Website. ƒ Surface mounted on 1 in. square Cu board, steady state. www.irf.com IRF6702M2DTRPbF IRF6702M2DTR1PbF V DSS 30V max ±20V max 5.2mΩ@ 10V 8.6mΩ@ 4. tot 9.4nC 3.3nC  ...

Page 2

IRF6702M2DTR/TR1PbF Static @ T = 25°C (each die unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS /∆T ∆ΒV Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold ...

Page 3

Absolute Maximum Ratings (each die operating consecutively 25°C Power Dissipation 70°C Power Dissipation D A Power Dissipation 25° Peak Soldering Temperature P T Operating Junction and ...

Page 4

IRF6702M2DTR/TR1PbF 1000 100 10 1 0.1 2.5V ≤ 60µs PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 15V ≤60µs PULSE WIDTH 100 ...

Page 5

175° 25° -40° 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1 Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward ...

Page 6

IRF6702M2DTR/TR1PbF 100 Duty Cycle = Single Pulse 10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆Τ 25°C and Tstart = 150°C. 0.1 1.0E-06 1.0E-05 80 TOP Single Pulse BOTTOM 1.0% Duty Cycle ...

Page 7

DUT 0 1K 20K S Fig 18a. Gate Charge Test Circuit D.U 20V 0.01 Ω Fig 19a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 % Fig 20a. Switching Time Test ...

Page 8

IRF6702M2DTR/TR1PbF D.U.T + ƒ • • - • + ‚ „  • G • • SD • Fig 19. ™ 8 Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current + D.U.T. V Waveform DS ...

Page 9

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations DirectFET™ Part Marking www.irf.com IRF6702M2DTR/TR1PbF DIMENSIONS METRIC IMPERIAL MIN MAX MIN MAX CODE A 6.25 6.35 0.246 0.250 B 4.80 5.05 0.189 0.199 3.85 3.95 0.152 ...

Page 10

... IRF6702M2DTR/TR1PbF DirectFET™ Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6702M2DTRPBF). For 1000 parts on 7" reel, order IRF6702M2DTR1PBF CODE LIN WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ...

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