IRF6702M2DTRPBF International Rectifier, IRF6702M2DTRPBF Datasheet - Page 8

• Manufacturer Part Number: IRF6702M2DTRPBF
• Description: MOSFET N-CH 30V 15A DL DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6702M2DTRPBF

• Input Capacitance (ciss) @ Vds: 1380pF @ 15V
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.6 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 14nC @ 4.5V
• Power - Max: 2.7W
• Mounting Type: *
• Package / Case: *
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 11.3 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 15 A
• Power Dissipation: 2.7 W
• Gate Charge Qg: 9.4 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF6702M2DTR/TR1PbF
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Fig 19.
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G
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D
D
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HEXFET
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G
S
Re-Applied
Voltage
Power MOSFETs
Reverse
Recovery
Current
G
S
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
SD
DS
D = DRAIN
Waveform
G = GATE
S = SOURCE
Waveform
Ripple ≤ 5%
Body Diode
Period
for N-Channel
Body Diode Forward
D
D
Diode Recovery
Current
dv/dt
Forward Drop
di/dt
CL
D =
Period
P.W.
V
V
I
SD
GS
DD
=10V
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