IRF6702M2DTRPBF International Rectifier, IRF6702M2DTRPBF Datasheet - Page 8
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IRF6702M2DTRPBF
Manufacturer Part Number
IRF6702M2DTRPBF
Description
MOSFET N-CH 30V 15A DL DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF6702M2DTRPBF.pdf
(10 pages)
Specifications of IRF6702M2DTRPBF
Input Capacitance (ciss) @ Vds
1380pF @ 15V
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6.6 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
2.35V @ 25µA
Gate Charge (qg) @ Vgs
14nC @ 4.5V
Power - Max
2.7W
Mounting Type
*
Package / Case
*
Configuration
Dual
Transistor Polarity
Dual N-Channel
Resistance Drain-source Rds (on)
11.3 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
15 A
Power Dissipation
2.7 W
Gate Charge Qg
9.4 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IRF6702M2DTR/TR1PbF
8
+
-
D.U.T
+
-
•
•
•
•
SD
Fig 19.
•
•
•
-
G
D
D
+
HEXFET
+
-
®
G
S
Re-Applied
Voltage
Power MOSFETs
Reverse
Recovery
Current
G
S
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
SD
DS
D = DRAIN
Waveform
G = GATE
S = SOURCE
Waveform
Ripple ≤ 5%
Body Diode
Period
for N-Channel
Body Diode Forward
D
D
Diode Recovery
Current
dv/dt
Forward Drop
di/dt
CL
D =
Period
P.W.
V
V
I
SD
GS
DD
=10V
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