IRF6702M2DTRPBF International Rectifier, IRF6702M2DTRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF6702M2DTRPBF
• Description: MOSFET N-CH 30V 15A DL DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6702M2DTRPBF

• Input Capacitance (ciss) @ Vds: 1380pF @ 15V
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.6 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 14nC @ 4.5V
• Power - Max: 2.7W
• Mounting Type: *
• Package / Case: *
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 11.3 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 15 A
• Power Dissipation: 2.7 W
• Gate Charge Qg: 9.4 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 14. Typ. Forward Transconductance vs. Drain Current
Fig 10. Typical Source-Drain Diode Forward Voltage
Fig 12. Maximum Drain Current vs. Case Temperature
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1000
100
80
60
40
20
50
40
30
20
10
10
0
0
1
0
25
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0
T J = 175°C
T J = 25°C
T J = -40°C
50
V SD , Source-to-Drain Voltage (V)
I D ,Drain-to-Source Current (A)
T C , Case Temperature (°C)
10
75
V DS = 15V
380µs PULSE WIDTH
100
20
T J = 25°C
125
T J = 175°C
30
V GS = 0V
150
175
40
Fig 15. Maximum Avalanche Energy vs. Drain Current
IRF6702M2DTR/TR1PbF
1000
Fig 13. Typical Threshold Voltage vs. Junction
100
3.0
2.5
2.0
1.5
1.0
0.5
300
250
200
150
100
0.1
10
50
1
0
-75 -50 -25 0
Fig 11. Maximum Safe Operating Area
0
25
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 25µA
I D = 250µA
I D = 1.0mA
I D = 1.0A
Starting T J , Junction Temperature (°C)
V DS , Drain-to-Source Voltage (V)
50
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
Temperature
75
1
25 50 75 100 125 150 175 200
DC
100
1msec
10msec
100µsec
TOP
BOTTOM 12A
125
10
150
I D
1.9A
3.0A
100
175
5