SI4808DY-T1-E3 Vishay, SI4808DY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4808DY-T1-E3
• Description: MOSFET N-CH/SCHOTTKY 30V 8SOIC
• Manufacturer: Vishay
• Series: LITTLE FOOT®r

Specifications of SI4808DY-T1-E3

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.7A
• Vgs(th) (max) @ Id: 800mV @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si4808DY
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
0.4
0.2
0.0
20
10
0.01
1
- 50
0.1
0.0
2
1
10
-4
Source-Drain Diode Forward Voltage
0.05
- 25
0.02
Duty Cycle = 0.5
0.1
0.2
0.2
V
SD
0
Single Pulse
- Source-to-Drain Voltage (V)
Threshold Voltage
T
0.4
J
25
T
- Temperature (°C)
10
J
= 150 °C
-3
50
0.6
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 µA
75
T
0.8
J
= 25 °C
100
10
-2
1.0
125
150
1.2
Square Wave Pulse Duration (s)
10
-1
0.04
0.03
0.02
0.01
0.00
1
50
40
30
20
10
0
10
0
-3
On-Resistance vs. Gate-to-Source Voltage
I
D
= 7.5 A
10
2
-2
V
GS
Single Pulse Power
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
- Gate-to-Source Voltage (V)
P
10
DM
JM
-1
4
- T
Time (s)
t
A
1
S09-0867-Rev. C, 18-May-09
= P
t
2
Document Number: 71157
1
DM
Z
6
thJA
100
thJA
t
t
1
2
(t)
10
= 93 °C/W
8
100
600
600
10