SI4808DY-T1-E3 Vishay, SI4808DY-T1-E3 Datasheet

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SI4808DY-T1-E3

Manufacturer Part Number
SI4808DY-T1-E3
Description
MOSFET N-CH/SCHOTTKY 30V 8SOIC
Manufacturer
Vishay
Series
LITTLE FOOT®r
Datasheet

Specifications of SI4808DY-T1-E3

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
22 mOhm @ 7.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
5.7A
Vgs(th) (max) @ Id
800mV @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4808DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 931
Part Number:
SI4808DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Ordering Information:
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 71157
S09-0867-Rev. C, 18-May-09
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
SCHOTTKY PRODUCT SUMMARY
V
V
DS
DS
30
30
(V)
(V)
G
G
S
S
1
1
2
2
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
1
2
3
4
Si4808DY -T1-E3
Si4808DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
Top View
Diode Forward Voltage
SO-8
0.030 at V
0.022 at V
0.50 V at 1.0 A
R
DS(on)
V
J
a
SD
= 150 °C)
a
GS
GS
(V)
8
7
6
5
(Ω)
(Lead (Pb)-free)
= 4.5 V
= 10 V
D
D
D
D
1
1
2
2
a
a
A
= 25 °C, unless otherwise noted
Steady-State
Steady-State
T
T
T
T
I
I
D
F
A
A
A
A
7.5
6.5
2.0
t ≤ 10 s
(A)
(A)
= 25 °C
= 70 °C
= 25 °C
= 70 °C
Symbol
Symbol
T
FEATURES
G
R
R
• Halogen-free According to IEC 61249-2-21
• LITTLE FOOT
• Compliant to RoHS directive 2002/95/EC
J
V
V
I
P
, T
DM
1
I
I
thJC
thJA
GS
DS
D
S
D
Definition
stg
N-Channel MOSFET
S
D
Typ.
1
1
52
93
35
MOSFET
10 s
7.5
6.0
1.7
2.0
1.3
®
Plus
Max.
62.5
110
40
- 55 to 150
± 20
30
30
G
2
Typ.
Steady State
N-Channel MOSFET
53
93
35
Schottky
Vishay Siliconix
5.7
4.6
0.9
1.1
0.7
D
S
2
2
Max.
62.5
110
40
Si4808DY
www.vishay.com
Schottky Diode
°C/W
Unit
Unit
°C
W
V
A
1

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SI4808DY-T1-E3 Summary of contents

Page 1

... Top View Ordering Information: Si4808DY -T1-E3 (Lead (Pb)-free) Si4808DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4808DY Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Symbol Static V Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b R Drain-Source On-State Resistance b Forward Transconductance b Diode Forward Voltage a Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time ...

Page 3

... On-Resistance vs. Drain Current 7 Total Gate Charge (nC) g Gate Charge Document Number: 71157 S09-0867-Rev. C, 18-May- 2.0 2.5 3.0 1000 Si4808DY Vishay Siliconix 125 ° ° °C 0 0.0 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) GS Transfer Characteristics 800 C iss 600 400 C oss C 200 rss ...

Page 4

... Si4808DY Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0.2 I 0.0 - 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0 ...

Page 5

... Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot 24 V 100 125 150 200 160 120 80 C oss Drain-to-Source Voltage (V) DS Capacitance Si4808DY Vishay Siliconix - 150 ° ° 0.0 0.3 0.6 0.9 1 Forward Voltage Drop (V) F Forward Voltage Drop 24 30 www ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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