SI7925DN-T1-E3 Vishay, SI7925DN-T1-E3 Datasheet

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SI7925DN-T1-E3

Manufacturer Part Number
SI7925DN-T1-E3
Description
MOSFET DUAL P-CH D-S 12V 1212-8
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI7925DN-T1-E3

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
42 mOhm @ 6.5A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
4.8A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 4.5V
Power - Max
1.3W
Mounting Type
*
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72343
S-81544-Rev. C, 07-Jul-08
Ordering Information: Si7925DN-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
PRODUCT SUMMARY
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
V
DS
- 12
(V)
8
D1
3.30 mm
7
D1
6
PowerPAK 1212-8
D2
Si7925DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
0.042 at V
0.058 at V
0.082 at V
http://www.vishay.com/ppg?73257
Bottom View
5
D2
R
DS(on)
J
a
= 150 °C)
1
a
GS
GS
GS
S1
Dual P-Channel 12-V (D-S) MOSFET
= - 4.5 V
= - 2.5 V
= - 1.8 V
(Ω)
2
G1
a
3
S2
3.30 mm
4
G2
a
b, c
). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
A
= 25 °C, unless otherwise noted
I
D
- 6.5
- 5.5
- 1.2
Steady State
Steady State
(A)
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 85 °C
= 25 °C
= 85 °C
FEATURES
APPLICATIONS
• Halogen-free Option Available
• TrenchFET
• Load Switch
• PA Switch
• Battery Switch
• Bi-Directional Switch
Symbol
Symbol
T
R
R
J
V
V
I
P
, T
I
DM
thJA
thJC
I
DS
GS
D
S
D
stg
G
1
P-Channel MOSFET
®
Power MOSFET: 1.8 V Rated
Typical
- 6.5
- 4.7
- 2.1
10 s
2.5
1.5
5.6
40
75
S
D
1
1
- 55 to 150
- 12
- 20
260
± 8
Steady State
G
Maximum
2
- 4.8
- 3.4
- 1.1
0.69
P-Channel MOSFET
1.3
50
94
Vishay Siliconix
7
Si7925DN
S
D
2
2
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
1

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SI7925DN-T1-E3 Summary of contents

Page 1

... Bottom View Ordering Information: Si7925DN-T1-E3 (Lead (Pb)-free) Si7925DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si7925DN Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72343 S-81544-Rev. C, 07-Jul-08 1500 1200 25°C J 1.0 1.2 1.4 1.6 Si7925DN Vishay Siliconix C iss 900 600 C oss 300 C rss Drain-to-Source Voltage (V) DS Capacitance 1.2 1.0 0.8 ...

Page 4

... Si7925DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0.3 0 250 µA D 0.1 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 100 Limited (on D(on) Limited °C ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72343. Document Number: 72343 S-81544-Rev. C, 07-Jul- Square W ave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si7925DN Vishay Siliconix - www.vishay.com 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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