SI4936CDY-T1-E3 Vishay, SI4936CDY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4936CDY-T1-E3
• Description: MOSFET 2N-CH 30V 5.8A SO8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4936CDY-T1-E3

• Input Capacitance (ciss) @ Vds: 325pF @ 15V
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 9nC @ 10V
• Power - Max: 2.3W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si4936CDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.1
10
1
- 50
0.0
Source-Drain Diode Forward Voltage
- 25
0.3
T
V
J
SD
= 150 °C
0
- Source-to-Drain Voltage (V)
Threshold Voltage
T
J
25
- Temperature (°C)
0.6
50
I
D
0.9
= 250 µA
75
0.01
100
0.1
10
T
1
0.1
100
J
= 25 °C
1.2
Safe Operating Area, Junction-to-Ambient
* V
Single Pulse
T
125
A
GS
Limited by R
= 25 °C
> minimum V
V
DS
New Product
150
1.5
- Drain-to-Source Voltage (V)
1
DS(on)
GS
*
BVDSS Limited
at which R
10
DS(on)
0.10
0.08
0.06
0.04
0.02
0.00
20
16
12
8
4
0
is specified
0.001
0
100 µA
1 ms
10 ms
100 ms
1 s
10 s, DC
On-Resistance vs. Gate-to-Source Voltage
0.01
100
2
V
GS
- Gate-to-Source Voltage (V)
0.1
Single Pulse Power
4
Time (s)
S09-0390-Rev. C, 09-Mar-09
1
Document Number: 69097
6
10
T
T
J
J
= 125 °C
= 25 °C
8
100
1000
10