TSAL5100 Vishay, TSAL5100 Datasheet - Page 3

• Manufacturer Part Number: TSAL5100
• Description: Infrared Emitters High Power 940nm 5 Volt 35mW 10 Deg
• Manufacturer: Vishay

Specifications of TSAL5100

• Radiant Intensity: 1000 mW/sr
• Maximum Forward Current: 100 mA
• Maximum Power Dissipation: 210 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Lens Shape: Circular
• Wavelength: 940 nm
• Package / Case: T-1 3/4
• Peak Wavelength: 940nm
• Forward Current If(av): 100mA
• Rise Time: 800ns
• Fall Time Tf: 800ns
• Supply Voltage Range: 1.35V To 3V
• Viewing Angle: 10°
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TSAL5100
Vishay Semiconductors
BASIC CHARACTERISTICS
T
www.vishay.com
3
amb
= 25 °C, unless otherwise specified
Fig. 3 - Pulse Forward Current vs. Pulse Duration
96 11987
14438
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 4 - Forward Current vs. Forward Voltage
13600
1000
10
10
10
10
10
10
10
10
100
0.1
10
0
4
3
2
1
1
1
0
-1
10
10
0
-2
0.1
1.0
0
0.5
0.05
V
F
10
10
- Forward Voltage (V)
1
I
t
F
p
t
-1
p
1
/T = 0.01
- Forward Current (mA)
- Pulse Duration (ms)
I
FSM
= 1 A (Single Pulse)
10
10
2
For technical questions, contact:
0
2
t
t
P
P
/T = 0.001
= 100 µs
High Power Infrared Emitting Diode,
10
10
3
1
3
940 nm, GaAlAs/GaAs
10
10
4
2
4
[e-mail]
Fig. 7 - Rel. Radiant Intensity/Power vs. Ambient Temperature
Fig. 8 - Relative Radiant Power vs. Wavelength
13602
Fig. 6 - Radiant Power vs. Forward Current
94 7993
14291
1000
1.25
0.75
0.25
100
0.1
1.0
0.5
1.6
1.2
0.8
0.4
10
- 10
1
0
0
10
890
0
0
T
10
amb
I
F
10
- Ambient Temperature (°C)
- Forward Current (mA)
1
λ
- Wavelength (nm)
I
F
50
= 100 mA
10
940
I
F
2
= 20 mA
Document Number: 81007
100
10
Rev. 1.6, 29-Jun-09
3
10
990
140
4