TSAL5100 Vishay, TSAL5100 Datasheet - Page 2

• Manufacturer Part Number: TSAL5100
• Description: Infrared Emitters High Power 940nm 5 Volt 35mW 10 Deg
• Manufacturer: Vishay

Specifications of TSAL5100

• Radiant Intensity: 1000 mW/sr
• Maximum Forward Current: 100 mA
• Maximum Power Dissipation: 210 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Lens Shape: Circular
• Wavelength: 940 nm
• Package / Case: T-1 3/4
• Peak Wavelength: 940nm
• Forward Current If(av): 100mA
• Rise Time: 800ns
• Fall Time Tf: 800ns
• Supply Voltage Range: 1.35V To 3V
• Viewing Angle: 10°
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Note
T
Document Number: 81007
Rev. 1.6, 29-Jun-09
amb
BASIC CHARACTERISTICS
PARAMETER
Forward voltage
Temperature coefficient of V
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of φ
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of λ
Rise time
Fall time
Virtual source diameter
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
= 25 °C, unless otherwise specified
21211
180
160
140
120
100
80
60
40
20
0
0
R
10 20 30 40 50 60 70 80 90 100
thJA
T
amb
= 230 K/W
- Ambient Temperature (°C)
e
p
F
For technical questions, contact:
method: 63 % encircled energy
High Power Infrared Emitting Diode,
V
I
I
I
R
F
F
F
I
I
= 0 V, f = 1 MHz, E = 0
TEST CONDITION
= 100 mA, t
= 100 mA, t
= 100 mA, t
F
F
= 1 A, t
= 1 A, t
I
I
I
I
I
I
F
F
F
F
F
I
F
V
F
940 nm, GaAlAs/GaAs
= 100 mA
= 100 mA
= 100 mA
= 100 mA
= 100 mA
= 20 mA
R
= 1 mA
= 5 V
p
p
= 100 µs
= 100 µs
p
p
p
= 20 ms
= 20 ms
= 20 ms
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SYMBOL
TK
TKλ
TKφ
Fig. 2 - Forward Current Limit vs. Ambient Temperature
V
V
Δλ
φ
λ
I
C
I
I
ϕ
t
t
d
R
e
e
e
p
r
f
F
F
VF
j
e
p
21212
120
100
80
60
40
20
0
0
MIN.
10
650
80
T
amb
20 30 40
R
thJA
- Ambient Temperature (°C)
Vishay Semiconductors
= 230 K/W
TYP.
1000
1.35
- 1.8
- 0.6
± 10
130
940
800
800
2.6
0.2
3.7
25
35
50
50 60 70 80
MAX.
TSAL5100
400
1.6
10
3
90 100
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mW/sr
mW/sr
UNIT
mV/K
nm/K
mW
%/K
deg
mm
nm
nm
µA
pF
ns
ns
V
V
2