SEP8706-001 Honeywell, SEP8706-001 Datasheet

SEP8706-001

Manufacturer Part Number

SEP8706-001

Description

Infrared Emitters Infrared Emitting Diode

Manufacturer

Honeywell

Datasheet

1.SEP8706-001.pdf (4 pages)

Specifications of SEP8706-001

Maximum Power Dissipation

100 mW

Maximum Operating Temperature

+ 85 C

Minimum Operating Temperature

- 40 C

Bandwidth

80 nm (Spectral)

Current, Forward

50 mA

Package Type

Side-Emitting Plastic IR Component

Power Dissipation

100 mW

Temperature, Operating, Maximum

85 °C

Temperature, Operating, Minimum

-40 °C

Time, Fall

0.7 us

Time, Rise

0.7 us

Voltage, Forward

1.7 V

Voltage, Reverse

3 V (Break Down)

Wave Length

880 nm

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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SEP8706-001

SEP Series AlGaAs Infrared Emitting Diode, Side-emitting Plastic Package

Representative

photograph, actual

product appearance may

vary.

Due to regional agency

approval requirements,

some products may not be

available in your area.

Please contact your

regional Honeywell office

regarding your product of

choice.

Product Type

Power Output

Beam Angle (Degree)

Package Style

Package Components

Forward Current

Continuous Forward Current

Forward Voltage

Reverse Breakdown Voltage

Output Wavelength

Spectral Bandwidth

Spectral Shift With Temperature

SEP8706-001

SEP Series AlGaAs Infrared Emitting Diode, Side-emitting Plastic

Package

Features

Description

The SEP8706 is an aluminum gallium arsenide infrared emitting

diode molded in a side-emitting smoke gray plastic package. The

chip is positioned to emit radiation through a plastic lens from the

side of the package. These devices typically exhibit 70% greater

power intensity than gallium arsenide devices at the same forward

current.

Side-looking plastic package

50 ° (nominal) beam angle

880 nm wavelength

Higher output power than GaAs at equivalent drive current

Mechanically and spectrally matched to SDP8406

phototransistor, SDP8106 photodarlington and SDP8000/8600

series Schmitt trigger

Product Specifications

IR Component

0.02 to 2.6 mW/cm²

Side-Emitting

Plastic

20 mA

50 mA

1.7 V

3 V

880 nm

80 nm

0.2 nm/°C

Related parts for SEP8706-001

SEP8706-001 Summary of contents

Page 1

... These devices typically exhibit 70% greater power intensity than gallium arsenide devices at the same forward current. SEP8706-001 SEP Series AlGaAs Infrared Emitting Diode, Side-emitting Plastic Package Product Type Power Output ...

Page 2

... Power Dissipation Operating Temperature Range Availability Product Name SEP8706-001 SEP Series AlGaAs Infrared Emitting Diode, Side-emitting Plastic Package SEP8706-001 SEP Series AlGaAs Infrared Emitting Diode, Side-emitting Plastic Package 0.7 µs 100 mW -40 ° °C [-40 °F to 185 °F] Global Infrared Emitting Diode ...

Page 3

... SEP8706-001 SEP Series AlGaAs Infrared Emitting Diode, Side-emitting Plastic Package ...

Page 4

... The information presented in this product sheet (or catalog) is for reference only. DO NOT USE this document as product installation information. Complete installation, operation and maintenance information is provided in the instructions supplied with each product. Failure to comply with these instructions could result in death or serious injury. © Copyright Honeywell Inc.1998-2004 All rights reserved. ...

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