SEP8706 Honeywell, SEP8706 Datasheet
SEP8706
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SEP8706 Summary of contents
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... SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger DESCRIPTION The SEP8706 is an aluminum gallium arsenide infrared emitting diode molded in a side-emitting smoke gray plastic package. The chip is positioned to emit radiation through a plastic lens from the side of the package. These devices typically exhibit 70% greater power intensity than gallium arsenide devices at the same forward current ...
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... SEP8706 AlGaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL ABSOLUTE MAXIMUM RATINGS (25¡C Free-Air Temperature unless otherwise noted) Continuous Forward Current Power Dissipation Operating Temperature Range Storage Temperature Range Soldering Temperature (5 sec) Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.78 mW/¡ ...
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... SEP8706 AlGaAs Infrared Emitting Diode Fig. 1 Radiant Intensity vs Angular Displacement 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -60 -45 -30 -15 0 +15 +30 +45 +60 Angular displacement - degrees Fig. 3 Forward Voltage vs Forward Current 1.6 1.5 1.4 1.3 1.2 1.1 1 Forward current - mA Fig. 5 Spectral Bandwidth 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 760 800 840 880 920 Wavelength - nm 54 Fig. 2 Radiant Intensity vs Forward Current gra_030 ...
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... SEP8706 AlGaAs Infrared Emitting Diode Fig. 7 Relative Power Output vs Free Air Temperature 0.2 0.1 -50 -25 0 +25 + Free-air temperature - (°C) A All Performance Curves Show Typical Values Honeywell reserves the right to make changes in order to improve design and supply the best products possible ...