CNY17-2X016 Vishay, CNY17-2X016 Datasheet - Page 6
![Optocoupler](/photos/31/35/313546/6-pdip400_sml.jpg)
CNY17-2X016
Manufacturer Part Number
CNY17-2X016
Description
Optocoupler
Manufacturer
Vishay
Datasheet
1.CNY17-2X016.pdf
(8 pages)
Specifications of CNY17-2X016
Leaded Process Compatible
Yes
Maximum Input Diode Current
60 mA
Maximum Reverse Diode Voltage
6 V
Output Device
Phototransistor
Output Type
DC
Configuration
1 Channel
Input Type
DC
Maximum Collector Emitter Voltage
70 V
Maximum Collector Emitter Saturation Voltage
0.4 V
Isolation Voltage
5000 Vrms
Current Transfer Ratio
125 %
Maximum Forward Diode Voltage
1.65 V
Maximum Collector Current
100 mA
Maximum Power Dissipation
150 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
Package / Case
PDIP-6
Number Of Elements
1
Reverse Breakdown Voltage
6V
Forward Voltage
1.65V
Forward Current
60mA
Collector-emitter Voltage
70V
Package Type
PDIP
Collector Current (dc) (max)
100mA
Power Dissipation
150mW
Collector-emitter Saturation Voltage
0.4V
Pin Count
6
Mounting
Through Hole
Operating Temp Range
-55C to 100C
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
CNY17
Vishay Semiconductors
www.vishay.com
6
Collector Current and Modulation Depth CNY17-1
Collector Current and Modulation Depth CNY17-2
Collector Current and Modulation Depth CNY17-3
icny17_14
icny17_15
icny17_13
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0
Fig. 13 - Saturation Voltage vs.
Fig. 14 - Saturation Voltage vs.
1
Fig. 15 - Saturation Voltage vs.
1
1
I
I
F
F
= 3 x I
= 2 x I
V
V
V
CEsat
CEsat
CEsat
I
F
C
C
= f (I
= f (I
= f (I
= 2 x I
I
I
C
I
C
C
C
C
C
)
)
)
(mA)
C
10
10
(mA)
10
(mA)
For technical questions, contact:
Optocoupler, Phototransistor Output,
I
F
I
I
= 3 x I
F
F
= I
= 3 x I
C
C
C
with Base Connection
100
100
100
optocoupleranswers@vishay.com
Fig. 17 - Permissible Power Dissipation for Transistor and Diode
Collector Current and Modulation Depth CNY17-4
icny17_16
icny17_18
200
150
100
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
50
0
0
Fig. 16 - Saturation Voltage vs.
0
1
V
CEsat
25
P
Diode
= f (I
tot
Transistor
= f (T
I
I
F
C
T
C
= I
)
(mA)
A
50
10
(°C)
C
I
A
I
F
F
)
= 3 x I
= 2 x I
Document Number: 83606
C
C
75
Rev. 1.7, 04-Nov-10
100
100