CNY17-2X016 Vishay, CNY17-2X016 Datasheet - Page 6

• Manufacturer Part Number: CNY17-2X016
• Description: Optocoupler
• Manufacturer: Vishay

Specifications of CNY17-2X016

• Leaded Process Compatible: Yes
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Phototransistor
• Output Type: DC
• Configuration: 1 Channel
• Input Type: DC
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 0.4 V
• Isolation Voltage: 5000 Vrms
• Current Transfer Ratio: 125 %
• Maximum Forward Diode Voltage: 1.65 V
• Maximum Collector Current: 100 mA
• Maximum Power Dissipation: 150 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP-6
• Number Of Elements: 1
• Reverse Breakdown Voltage: 6V
• Forward Voltage: 1.65V
• Forward Current: 60mA
• Collector-emitter Voltage: 70V
• Package Type: PDIP
• Collector Current (dc) (max): 100mA
• Power Dissipation: 150mW
• Collector-emitter Saturation Voltage: 0.4V
• Pin Count: 6
• Mounting: Through Hole
• Operating Temp Range: -55C to 100C
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

CNY17
Vishay Semiconductors
www.vishay.com
6
Collector Current and Modulation Depth CNY17-1
Collector Current and Modulation Depth CNY17-2
Collector Current and Modulation Depth CNY17-3
icny17_14
icny17_15
icny17_13
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0
Fig. 13 - Saturation Voltage vs.
Fig. 14 - Saturation Voltage vs.
1
Fig. 15 - Saturation Voltage vs.
1
1
I
I
F
F
= 3 x I
= 2 x I
V
V
V
CEsat
CEsat
CEsat
I
F
C
C
= f (I
= f (I
= f (I
= 2 x I
I
I
C
I
C
C
C
C
C
)
)
)
(mA)
C
10
10
(mA)
10
(mA)
For technical questions, contact:
Optocoupler, Phototransistor Output,
I
F
I
I
= 3 x I
F
F
= I
= 3 x I
C
C
C
with Base Connection
100
100
100
[e-mail]
Fig. 17 - Permissible Power Dissipation for Transistor and Diode
Collector Current and Modulation Depth CNY17-4
icny17_16
icny17_18
200
150
100
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
50
0
0
Fig. 16 - Saturation Voltage vs.
0
1
V
CEsat
25
P
Diode
= f (I
tot
Transistor
= f (T
I
I
F
C
T
C
= I
)
(mA)
A
50
10
(°C)
C
I
A
I
F
F
)
= 3 x I
= 2 x I
Document Number: 83606
C
C
75
Rev. 1.7, 04-Nov-10
100
100