CNY17-2X016 Vishay, CNY17-2X016 Datasheet - Page 2
![Optocoupler](/photos/31/35/313546/6-pdip400_sml.jpg)
CNY17-2X016
Manufacturer Part Number
CNY17-2X016
Description
Optocoupler
Manufacturer
Vishay
Datasheet
1.CNY17-2X016.pdf
(8 pages)
Specifications of CNY17-2X016
Leaded Process Compatible
Yes
Maximum Input Diode Current
60 mA
Maximum Reverse Diode Voltage
6 V
Output Device
Phototransistor
Output Type
DC
Configuration
1 Channel
Input Type
DC
Maximum Collector Emitter Voltage
70 V
Maximum Collector Emitter Saturation Voltage
0.4 V
Isolation Voltage
5000 Vrms
Current Transfer Ratio
125 %
Maximum Forward Diode Voltage
1.65 V
Maximum Collector Current
100 mA
Maximum Power Dissipation
150 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
Package / Case
PDIP-6
Number Of Elements
1
Reverse Breakdown Voltage
6V
Forward Voltage
1.65V
Forward Current
60mA
Collector-emitter Voltage
70V
Package Type
PDIP
Collector Current (dc) (max)
100mA
Power Dissipation
150mW
Collector-emitter Saturation Voltage
0.4V
Pin Count
6
Mounting
Through Hole
Operating Temp Range
-55C to 100C
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
CNY17
Vishay Semiconductors
Note
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
Note
• Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
www.vishay.com
2
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
OUTPUT
Collector emitter breakdown voltage
Emitter base breakdown voltage
Collector current
Power dissipation
COUPLER
Isolation test voltage
between emitter and detector
Creepage distance
Clearance distance
Isolation thickness between
emitter and detector
Comparative tracking index
per DIN IEC 112/VDE 0303, part 1
Isolation resistance
Storage temperature
Operating temperature
Soldering temperature
ELECTRICAL CHARACTERISTCS (T
PARAMETER
INPUT
Forward voltage
Breakdown voltage
Reverse current
Capacitance
Thermal resistance
OUTPUT
Collector emitter capacitance
Collector base capacitance
Emitter base capacitance
Thermal resistance
COUPLER
Collector emitter, saturation voltage
Coupling capacitance
Collector emitter, leakage current
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
evaluations. Typical values are for information only and are not part of the testing requirements.
For technical questions, contact:
V
Optocoupler, Phototransistor Output,
F
V
V
V
V
TEST CONDITION
= 10 mA, I
CE
CB
EB
R
= 0 V, f = 1 MHz
= 5 V, f = 1 MHz
= 5 V, f = 1 MHz
= 5 V, f = 1 MHz
I
I
V
R
F
V
CE
= 60 mA
= 10 mA
amb
R
max. 10 s, dip soldering: distance to
amb
= 6 V
= 10 V
with Base Connection
C
= 25 °C, unless otherwise specified)
V
= 25 °C, unless otherwise specified)
V
= 2.5 mA
IO
seating plane ≥ 1.5 mm
IO
= 500 V, T
TEST CONDITION
= 500 V, T
t < 1 ms
t = 1 s
CNY17-1
CNY17-2
CNY17-3
CNY17-4
amb
optocoupleranswers@vishay.com
amb
PART
= 100 °C
= 25 °C
SYMBOL
V
C
I
I
I
I
V
C
C
R
R
CEsat
C
C
CEO
CEO
CEO
CEO
V
I
BR
CB
R
CE
EB
O
th
th
F
C
SYMBOL
BV
BV
P
T
MIN.
V
T
T
R
R
amb
I
I
diss
ISO
stg
sld
CEO
EBO
C
C
6
IO
IO
TYP.
1.25
0.01
0.25
750
500
- 55 to + 150
- 55 to + 100
5.2
6.5
7.5
0.6
25
2
2
5
5
VALUE
≥ 10
≥ 10
5300
≥ 0.4
100
150
175
260
≥ 7
≥ 7
70
50
7
Document Number: 83606
12
11
MAX.
1.65
100
100
0.4
Rev. 1.7, 04-Nov-10
10
50
50
UNIT
V
mW
mm
mm
mm
mA
mA
RMS
°C
°C
°C
Ω
Ω
V
V
UNIT
K/W
K/W
μA
nA
nA
nA
nA
pF
pF
pF
pF
pF
V
V
V