IL252 Vishay, IL252 Datasheet - Page 2

• Manufacturer Part Number: IL252
• Description: OPTOCOUPLER, PHOTOTRANSISTOR, 5300VRMS
• Manufacturer: Vishay

Specifications of IL252

• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 10mA
• Output Voltage: 30V
• Opto Case Style: DIP
• No. Of Pins: 6
• Mounting Type: Through Hole
• Isolation Voltage: 5.3kV
• Number Of Channels: 2
• Input Type: AC, DC
• Voltage - Isolation: 5300Vrms
• Current Transfer Ratio (min): 100% @ 10mA
• Voltage - Output: 30V
• Current - Dc Forward (if): 60mA
• Vce Saturation (max): 400mV
• Output Type: Transistor with Base
• Package / Case: 6-DIP (0.300", 7.62mm)
• Forward Current: 60 mA
• Maximum Input Diode Current: 60 mA
• Output Device: Transistor With Base
• Configuration: 1
• Maximum Collector Emitter Voltage: 30 V
• Maximum Collector Emitter Saturation Voltage: 400 mV
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Power Dissipation: 400 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -
• Current Transfer Ratio (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 751-1290-5; IL252GI; IL252GI

Notes
(1)
(2)
Note
T
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Document Number: 83612
Rev. 1.6, 10-Dec-08
amb
ABSOLUTE MAXIMUM RATINGS
PARAMETER
COUPLER
Package power dissipation
Derate linearly from 25 °C
Isolation test voltage
between emitter and detector
Creepage distance
Clearance distance
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
Isolation resistance
Storage temperature
Operating temperature
Junction temperature
Soldering temperature
ELECTRICAL CHARACTERISTICS
PARAMETER
INPUT
Forward voltage
Breakdown voltage
Reverse current
Capacitance
Thermal resistance junction to lead
OUTPUT
Collector emitter capacitance
Collector base capacitance
Emitter base capacitance
Collector emitter leakage voltage
Collector emitter saturation voltage
Base emitter voltage
DC forward current gain
DC forward current gain saturated
Thermal resistance junction to lead
COUPLER
Capacitance (input to output)
Insulation resistance
T
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
amb
= 25 °C, unless otherwise specified.
= 25 °C, unless otherwise specified.
(2)
For technical questions, contact: [e-mail]
V
V
V
I
V
V
CE
V
V
V
V
2.0 mm from case bottom
V
CE
CB
EB
IO
CE
IO
CE
CE
I-O
TEST CONDITION
R
(1)
= 1.0 mA, I
Output, with Base Connection
= 500 V, T
= 5.0 V, f = 1.0 MHz
= 5.0 V, f = 1.0 MHz
= 5.0 V, f = 1.0 MHz
TEST CONDITION
= 0 V, f = 1.0 MHz
Optocoupler, Phototransistor
= 500 V, T
= 0.4 V, I
= 0 V, f = 1.0 MHz
= 10 V, I
= 10 V, I
V
V
I
I
V
F
R
I-O
CE
R
= 60 mA
= 10 µA
= 6.0 V
= 500 V
= 10 V
B
B
B
amb
B
amb
= 20 µA
= 20 µA
= 20 µA
= 20 µA
= 100 °C
= 25 °C
SYMBOL
V
h
I
V
R
C
C
C
V
R
h
C
CEO
CEsat
FEsat
C
R
V
I
BR
CE
CB
BE
FE
R
thjl
EB
thjl
IO
O
F
S
PART
MIN.
200
120
6
SYMBOL
T
V
CTI
T
P
R
R
T
Vishay Semiconductors
amb
T
ISO
stg
sld
tot
IO
IO
j
TYP.
1.25
0.01
0.25
0.65
10
750
650
400
500
6.8
8.5
0.6
30
40
11
5
14
- 40 to + 150
- 40 to + 100
VALUE
≥ 10
≥ 10
5300
250
175
100
260
3.3
≥ 7
≥ 7
IL1, IL2, IL5
12
11
MAX.
1800
1.65
600
10
50
www.vishay.com
mW/°C
UNIT
V
mW
mm
mm
°C
°C
°C
°C
UNIT
RMS
Ω
Ω
K/W
K/W
µA
pF
pF
pF
pF
nA
pF
Ω
V
V
V
V
295