TSHG5510 Vishay, TSHG5510 Datasheet - Page 2

• Manufacturer Part Number: TSHG5510
• Description: IR EMITTER 830NM 5MM 40DEG-e2
• Manufacturer: Vishay

Specifications of TSHG5510

• Radiant Intensity: 32 mW/sr
• Maximum Forward Current: 100 mA
• Maximum Power Dissipation: 180 mW
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Operating Voltage: 5 V
• Wavelength: 830 nm
• Package / Case: T-1 3/4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TSHG5510
Vishay Semiconductors
Note
T
www.vishay.com
2
amb
BASIC CHARACTERISTICS
PARAMETER
Forward voltage
Temperature coefficient of V
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of φ
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of λ
Rise time
Fall time
Cut-off frequency
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
= 25 °C, unless otherwise specified
21142
200
180
160
140
120
100
80
60
40
20
0
0
10 20
T
amb
R
thJA
- Ambient Temperature (°C)
30 40 50 60 70 80 90 100
= 230 K/W
e
p
F
For technical questions, contact:
I
High Speed Infrared Emitting Diode,
DC
V
I
I
I
I
F
R
F
F
F
830 nm, GaAlAs Double Hetero
= 70 mA, I
= 450 mA, t
I
I
= 0 V, f = 1 MHz, E = 0
TEST CONDITION
= 100 mA, t
= 100 mA, t
= 100 mA, t
F
F
= 1 A, t
= 1 A, t
I
I
I
I
I
I
F
F
F
F
F
F
I
V
F
= 100 mA
= 100 mA
= 100 mA
= 100 mA
= 100 mA
= 100 mA
R
= 1 mA
= 5 V
p
p
AC
= 100 µs
= 100 µs
p
p
p
p
= 30 mA pp
= 100 µs
= 20 ms
= 20 ms
= 20 ms
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SYMBOL
TK
TKφ
TKλ
Fig. 2 - Forward Current Limit vs. Ambient Temperature
Δλ
V
V
V
C
φ
λ
I
I
I
ϕ
f
t
t
R
e
e
r
c
e
p
f
F
F
F
VF
j
21143
e
p
120
100
80
60
40
20
0
0
MIN.
10
1.3
1.5
18
T
amb
20 30 40
R
thJA
- Ambient Temperature (°C)
= 230 K/W
- 0.35
TYP.
1.45
1.75
- 1.8
± 38
0.25
110
320
830
2.1
32
55
55
15
15
24
50 60 70 80
Document Number: 81887
MAX.
1.7
2.1
10
54
Rev. 1.1, 25-Jun-09
90 100
mW/sr
mW/sr
mV/K
UNIT
nm/K
MHz
mW
%/K
deg
nm
nm
µA
pF
ns
ns
V
V
V