TSHG5510 Vishay, TSHG5510 Datasheet
TSHG5510
Specifications of TSHG5510
Related parts for TSHG5510
TSHG5510 Summary of contents
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... High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero 21061 DESCRIPTION TSHG5510 is an infrared, 830 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. PRODUCT SUMMARY COMPONENT I (mW/sr) e TSHG5510 32 Note Test conditions see table “Basic Characteristics“ ...
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... TSHG5510 Vishay Semiconductors 200 180 160 140 120 R = 230 K/W thJA 100 100 T - Ambient Temperature (°C) 21142 amb Fig Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of φ ...
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... GaAlAs Double Hetero T < 50 °C amb 0.05 0.1 0.2 0.5 10 100 21062 3 3.5 4 16972_1 Fig Relative Radiant Power vs. Wavelength 1000 21012 Fig Relative Radiant Intensity vs. Angular Displacement emittertechsupport@vishay.com TSHG5510 Vishay Semiconductors 1000 100 100 µ 0.002 P 0 100 1000 I - Forward Current (mA) F Fig ...
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... TSHG5510 Vishay Semiconductors PACKAGE DIMENSIONS in millimeters A 1.1 ± 0.25 Drawing-No.: 6.544-5390.01-4 Issue: 2; 19.05.09 20796 www.vishay.com For technical questions, contact: 4 High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero C + 0.15 0.5 - 0.05 + 0.15 0.5 - 0.05 2.54 nom. emittertechsupport@vishay.com SR2.35 Area not plane Ø ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...