SUD50P04-09L-E3 Vishay, SUD50P04-09L-E3 Datasheet - Page 4

TRANSISTOR,MOSFET,P-CHANNEL,40V V(BR)DSS,50A I(D),TO-252

SUD50P04-09L-E3

Manufacturer Part Number
SUD50P04-09L-E3
Description
TRANSISTOR,MOSFET,P-CHANNEL,40V V(BR)DSS,50A I(D),TO-252
Manufacturer
Vishay
Datasheet

Specifications of SUD50P04-09L-E3

Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.0094 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
73 S
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
50 A
Power Dissipation
3000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TO-252
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUD50P04-09L-E3
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
SUD50P04-09L-E3
0
SUD50P04-09L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
THERMAL RATINGS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72243.
www.vishay.com
4
0.01
0.1
1.8
1.6
1.4
1.2
1.0
0.8
0.6
60
50
40
30
20
10
0
2
1
- 50 - 25
0
10
0.05
0.1
On-Resistance vs. Junction Temperature
Duty Cycle = 0.5
0.2
-4
Maximum Avalanche and Drain Current
V
I
D
GS
25
= 50 A
= 10 V
Single Pulse
0.02
0
T
T
vs. Case Temperature
J
50
C
- Junction Temperature (°C)
- Case Temperature (°C)
25
75
50
75
100
10
Normalized Thermal Transient Impedance, Junction-to-Case
100
-3
125
125
150
150
175
175
Square Wave Pulse Duration (s)
10
-2
100
1000
10
100
1
10
0.0
1
0.1
* V
Limited by R
GS
Source-Drain Diode Forward Voltage
0.3
> minimum V
V
V
SD
Limited
T
DS
I
D(on)
J
= 150 °C
- Source-to-Drain Voltage (V)
- Drain-to-Source Voltage (V)
Safe Operating Area
DS(on)
Single Pulse
1
T
0.6
C
*
= 25 °C
GS
10
at which R
BVDSS Limited
-1
I
0.9
DM
T
J
S10-0546-Rev. C, 08-Mar-10
= 25 °C
Limited
Document Number: 72243
10
DS(on)
1.2
is specified
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
1.5
100
1

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