SUD50P04-09L-E3 Vishay, SUD50P04-09L-E3 Datasheet - Page 2

• Manufacturer Part Number: SUD50P04-09L-E3
• Description: TRANSISTOR,MOSFET,P-CHANNEL,40V V(BR)DSS,50A I(D),TO-252
• Manufacturer: Vishay

Specifications of SUD50P04-09L-E3

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.0094 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 73 S
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 3000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SUD50P04-09L
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source Drain-Diode Ratings and Characteristics T
Continuous Current
Pulsed Current
Forward Voltage
Reverse Recovery Time
c
b
c
a
c
c
c
c
c
a
a
J
= 25 °C, unless otherwise noted
a
Symbol
R
V
I
t
t
I
C
I
DS(on)
C
V
V
GS(th)
D(on)
C
Q
Q
d(on)
d(off)
GSS
DSS
I
Q
g
SM
I
t
oss
t
t
DS
rss
SD
iss
S
rr
fs
gs
gd
r
f
g
C
V
V
V
= 25 °C
V
V
I
DS
V
D
GS
GS
DS
DS
GS
≅ - 50 A, V
= - 20 V, V
= - 10 V, I
= - 10 V, I
I
= - 32 V, V
= - 32 V, V
F
V
V
V
= 0 V, V
V
V
V
V
V
V
= - 50 A, dI/dt = 100 A/µs
DS
DS
GS
DD
b
I
GS
DS
GS
DS
F
DS
Test Conditions
= - 50 A, V
= V
= - 5 V, V
= - 4.5 V, I
= 0 V, V
= - 20 V, R
= 0 V, I
= - 10 V, I
= - 32 V, V
= - 5 V, I
GS
DS
GEN
D
D
GS
GS
GS
= - 50 A, T
= - 50 A, T
, I
= - 25 V, f = 1 MHz
= - 10 V, I
D
D
= 0 V, T
= 0 V, T
= - 10 V, R
GS
GS
= - 250 µA
D
= - 250 µA
D
GS
D
GS
L
= - 24 A
= ± 20 V
= - 24 A
= - 10 V
= - 18 A
= 0.4 Ω
= 0 V
= 0 V
J
J
J
J
D
= 125 °C
= 175 °C
= 125 °C
= 175 °C
g
= - 50 A
= 6 Ω
Min.
- 40
- 50
- 1
0.0075
0.0115
4800
Typ.
18.5
- 1.0
700
550
102
145
140
73
27
10
60
55
S10-0546-Rev. C, 08-Mar-10
Document Number: 72243
0.0094
0.0145
± 100
0.014
0.017
Max.
- 150
- 100
- 1.5
- 50
- 50
150
220
220
- 3
- 1
15
90
85
Unit
nA
µA
pF
nC
ns
ns
Ω
V
A
S
A
V