SUD50P04-08-GE3 Vishay, SUD50P04-08-GE3 Datasheet - Page 5

• Manufacturer Part Number: SUD50P04-08-GE3
• Description: P-CHANNEL 40-V (D-S), MOSFET
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUD50P04-08-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8.1 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 159nC @ 10V
• Input Capacitance (ciss) @ Vds: 5380pF @ 20V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Transistor Polarity: P Channel
• Drain Source Voltage Vds: -40V
• On Resistance Rds(on): 6.7mohm
• Rds(on) Test Voltage Vgs: -10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-252
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0067 Ohms
• Forward Transconductance Gfs (max / Min): 45 S
• Continuous Drain Current: - 50 A
• Power Dissipation: 73.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SUD50P04-08-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65594.
Document Number: 65594
S10-0034-Rev. A, 11-Jan-10
100
Single Pulse Avalanche Current Capability vs. Time
10
1
10
0.01
0.1
-5
1
10
-4
0.2
0.1
Duty Cycle = 0.5
Single Pulse
T
J
= 150 °C
0.02
10
-4
0.05
10
Time (s)
-3
10
T
-3
J
= 25 °C
Normalized Thermal Transient Impedance, Junction-to-Case
10
-2
10
-2
10
Square Wave Pulse Duration (s)
-1
10
-1
1000
0.01
100
0.1
10
1
0.1
Limited by R
* V
GS
Single Pulse
T
C
> minimum V
= 25 °C
V
1
DS
DS(on)
- Drain-to-Source Voltage (V)
Safe Operating Area
1
*
GS
at which R
SUD50P04-08
10
Vishay Siliconix
BVDSS
Limited
10
DS(on)
is specified
www.vishay.com
100 µA
1 ms
10 ms, 100 ms
1 s, 10 s, DC
100
1
0
0
5