SUD50P04-08-GE3 Vishay, SUD50P04-08-GE3 Datasheet - Page 2

• Manufacturer Part Number: SUD50P04-08-GE3
• Description: P-CHANNEL 40-V (D-S), MOSFET
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUD50P04-08-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8.1 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 159nC @ 10V
• Input Capacitance (ciss) @ Vds: 5380pF @ 20V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Transistor Polarity: P Channel
• Drain Source Voltage Vds: -40V
• On Resistance Rds(on): 6.7mohm
• Rds(on) Test Voltage Vgs: -10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-252
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0067 Ohms
• Forward Transconductance Gfs (max / Min): 45 S
• Continuous Drain Current: - 50 A
• Power Dissipation: 73.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SUD50P04-08-GE3TR

SUD50P04-08
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Ratings and Characteristics T
Continuous Current
Pulsed Current
Forward Voltage
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
c
b
c
a
c
c
c
c
c
a
a
J
= 25 °C, unless otherwise noted
a
I
Symbol
R
RM(REC)
V
I
t
t
I
C
V
I
DS(on)
C
V
GS(th)
D(on)
C
Q
Q
d(on)
d(off)
GSS
DSS
I
Q
Q
g
R
SM
I
t
oss
t
t
DS
rss
SD
iss
S
rr
fs
gs
gd
r
f
g
rr
g
V
V
V
V
I
DS
DS
V
D
DS
DS
GS
≅ - 10 A, V
= - 20 V, V
= - 20 V, V
C
I
= - 40 V, V
= - 40 V, V
F
V
V
V
= 0 V, V
V
V
V
V
= 25 °C
V
DS
= - 10 A, dI/dt = 100 A/µs
V
DS
GS
I
DS
DS
GS
DS
DS
F
DD
Test Conditions
≤ - 10 V, V
= - 10 A, V
= V
= - 4.5 V, I
= 0 V, V
= 0 V, I
= - 10 V, I
= - 15 V, I
= - 40 V, V
= - 20 V, R
f = 1 MHz
GS
DS
GEN
b
GS
GS
GS
GS
, I
= - 20 V, f = 1 MHz
= - 4.5 V, I
= - 10 V, I
D
D
= 0 V, T
= 0 V, T
= - 10 V, R
GS
= - 250 µA
= - 250 µA
GS
D
D
GS
D
GS
= ± 20 V
= - 22 A
= - 22 A
L
= - 19 A
= - 10 V
= 0 V
= 2 Ω
= 0 V
J
J
D
= 125 °C
= 150 °C
D
g
= - 20 A
= - 20 A
= 1 Ω
Min.
- 40
- 50
0.4
- 1
0.0067
0.0097
5380
Typ.
- 0.8
570
500
106
1.8
45
60
22
27
15
12
70
18
35
- 2
33
S10-0034-Rev. A, 11-Jan-10
Document Number: 65594
0.0081
0.0117
± 250
Max.
- 250
- 100
- 2.5
- 1.5
- 50
- 50
159
105
3.6
- 1
90
23
18
27
53
- 3
50
Unit
nA
µA
pF
nC
nC
ns
ns
Ω
Ω
V
A
S
A
V
A