ST300S20P0PBF Vishay, ST300S20P0PBF Datasheet - Page 3
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ST300S20P0PBF
Manufacturer Part Number
ST300S20P0PBF
Description
SILICON CONTROLLED RECTIFIER,2kV V(DRM),300A I(T),TO-209AE
Manufacturer
Vishay
Datasheet
1.ST300S12P0.pdf
(7 pages)
Specifications of ST300S20P0PBF
Scr Type
Standard Recovery
Voltage - Off State
2000V
Voltage - Gate Trigger (vgt) (max)
3V
Voltage - On State (vtm) (max)
1.66V
Current - On State (it (av)) (max)
300A
Current - On State (it (rms)) (max)
470A
Current - Gate Trigger (igt) (max)
200mA
Current - Hold (ih) (max)
600mA
Current - Off State (max)
50mA
Current - Non Rep. Surge 50, 60hz (itsm)
8000A, 8380A
Operating Temperature
-40°C ~ 125°C
Mounting Type
Chassis Mount
Package / Case
TO-209AE, TO-118
Current - On State (it (rms) (max)
470A
Breakover Current Ibo Max
8380 A
Rated Repetitive Off-state Voltage Vdrm
2000 V
Off-state Leakage Current @ Vdrm Idrm
50 mA
Forward Voltage Drop
1.66 V
Gate Trigger Voltage (vgt)
3 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
200 mA
Holding Current (ih Max)
600 mA
Mounting Style
Stud
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
VS-ST300S20P0PBF
VS-ST300S20P0PBF
VSST300S20P0PBF
VSST300S20P0PBF
VS-ST300S20P0PBF
VSST300S20P0PBF
VSST300S20P0PBF
Note
• The table above shows the increment of thermal resistance R
Document Number: 94406
Revision: 11-Aug-08
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, case to heatsink
Mounting torque, ± 10 %
Approximate weight
Case style
ΔR
CONDUCTION ANGLE
thJC
CONDUCTION
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
For technical questions, contact: ind-modules@vishay.com
0.011
0.013
0.017
0.025
0.041
Phase Control Thyristors
(Stud Version), 300 A
SYMBOL
SYMBOL
P
+ V
- V
R
R
P
V
V
T
G(AV)
I
I
I
GM
T
thCS
GD
thJC
GT
GM
Stg
GT
GD
GM
J
GM
thJC
T
T
T
T
T
T
T
T
T
T
T
DC operation
Mounting surface, smooth, flat and greased
Non-lubricated threads
See dimensions - link at the end of datasheet
RECTANGULAR CONDUCTION
J
J
J
J
J
J
J
J
J
J
J
when devices operate at different conduction angles than DC
= T
= T
= T
= T
= - 40 °C
= 25 °C
= 125 °C
= - 40 °C
= 25 °C
= 125 °C
= T
J
J
J
J
J
maximum
maximum, t
maximum, f = 50 Hz, d% = 50
maximum, t
maximum, t
0.008
0.014
0.018
0.026
0.042
TEST CONDITIONS
TEST CONDITIONS
p
p
p
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated V
cathode applied
≤ 5 ms
≤ 5 ms
≤ 5 ms
Vishay High Power Products
DRM
ST300SPbF Series
TEST CONDITIONS
anode to
T
J
= T
J
maximum
TYP.
TO-209AE (TO-118)
200
100
- 40 to 125
- 40 to 150
2.5
1.8
1.1
50
VALUES
VALUES
(425)
0.10
0.03
48.5
10.0
0.25
535
2.0
3.0
5.0
20
10
www.vishay.com
MAX.
200
3
-
-
-
-
UNITS
K/W
(lbf · in)
UNITS
UNITS
N · m
K/W
mA
mA
°C
W
A
V
V
V
g
3