ST1280C04K0 Vishay, ST1280C04K0 Datasheet - Page 3

SILICON CONTROLLED RECTIFIER,400V V(DRM),2.3kA I(T),TO-200var48

ST1280C04K0

Manufacturer Part Number
ST1280C04K0
Description
SILICON CONTROLLED RECTIFIER,400V V(DRM),2.3kA I(T),TO-200var48
Manufacturer
Vishay
Datasheets

Specifications of ST1280C04K0

Scr Type
Standard Recovery
Voltage - Off State
400V
Voltage - Gate Trigger (vgt) (max)
3V
Voltage - On State (vtm) (max)
1.44V
Current - On State (it (av)) (max)
2310A
Current - On State (it (rms)) (max)
4150A
Current - Gate Trigger (igt) (max)
200mA
Current - Hold (ih) (max)
600mA
Current - Off State (max)
100mA
Current - Non Rep. Surge 50, 60hz (itsm)
42500A, 44500A
Operating Temperature
-40°C ~ 125°C
Mounting Type
Chassis Mount
Package / Case
TO-200AC, K-PUK, A-24
Current - On State (it (rms) (max)
4150A
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*ST1280C04K0
VS-ST1280C04K0
VS-ST1280C04K0
VSST1280C04K0
VSST1280C04K0

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ST1280C04K0
Manufacturer:
HOLTEK
Quantity:
3 400
Note
• The table above shows the increment of thermal resistance R
Document Number: 93718
Revision: 11-Aug-08
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to heatsink
Maximum thermal resistance, case to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
ΔR
CONDUCTION ANGLE
thJC
CONDUCTION
180°
120°
90°
60°
30°
SINGLE SIDE
SINUSOIDAL CONDUCTION
0.003
0.004
0.005
0.007
0.012
For technical questions, contact: ind-modules@vishay.com
DOUBLE SIDE
Phase Control Thyristors
SYMBOL
SYMBOL
(Hockey PUK Version),
R
R
P
+ V
- V
P
0.003
0.004
0.005
0.007
0.012
V
T
V
G(AV)
I
thC-hs
I
I
thJ-hs
T
GM
GD
GT
GM
Stg
GD
GT
GM
J
GM
thJC
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
See dimensions - link at the end of datasheet
2310 A
T
T
T
T
T
T
T
T
T
T
J
J
J
J
J
J
J
J
J
J
RECTANGULAR CONDUCTION
when devices operate at different conduction angles than DC
= T
= T
= T
= - 40 °C
= 25 °C
= 125 °C
= - 40 °C
= 25 °C
= 125 °C
= T
SINGLE SIDE
J
J
J
J
maximum
0.002
0.004
0.005
0.007
0.012
maximum, t
maximum, f = 50 Hz, d% = 50
maximum, t
TEST CONDITIONS
TEST CONDITIONS
p
p
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated V
cathode applied
DOUBLE SIDE
≤ 5 ms
≤ 5 ms
0.002
0.004
0.005
0.007
0.012
Vishay High Power Products
DRM
ST1280C..K Series
anode to
TEST CONDITIONS
T
J
= T
J
maximum
TYP. MAX.
200
100
- 40 to 125
- 40 to 150
1.4
1.1
0.9
50
VALUES
VALUES
24 500
(2500)
0.042
0.021
0.006
0.003
A-24 (K-PUK)
0.25
425
3.0
5.0
16
20
10
3
www.vishay.com
200
3.0
-
-
-
-
UNITS
UNITS
UNITS
K/W
K/W
(kg)
mA
mA
°C
W
N
g
A
V
V
V
3

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