ST1280C04K0 Vishay, ST1280C04K0 Datasheet - Page 2

• Manufacturer Part Number: ST1280C04K0
• Description: SILICON CONTROLLED RECTIFIER,400V V(DRM),2.3kA I(T),TO-200var48
• Manufacturer: Vishay

Specifications of ST1280C04K0

• Scr Type: Standard Recovery
• Voltage - Off State: 400V
• Voltage - Gate Trigger (vgt) (max): 3V
• Voltage - On State (vtm) (max): 1.44V
• Current - On State (it (av)) (max): 2310A
• Current - On State (it (rms)) (max): 4150A
• Current - Gate Trigger (igt) (max): 200mA
• Current - Hold (ih) (max): 600mA
• Current - Off State (max): 100mA
• Current - Non Rep. Surge 50, 60hz (itsm): 42500A, 44500A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: TO-200AC, K-PUK, A-24
• Current - On State (it (rms) (max): 4150A
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *ST1280C04K0; VS-ST1280C04K0; VS-ST1280C04K0; VSST1280C04K0; VSST1280C04K0

ST1280C..K Series
Vishay High Power Products
www.vishay.com
2
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current
Maximum peak, one-cycle
non-repetitive surge current
Maximum I
Maximum I
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
Maximum holding current
Typical latching current
SWITCHING
PARAMETER
Maximum non-repetitive rate of
rise of turned-on current
Typical delay time
Typical turn-off time
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
2
2
t for fusing
√t for fusing
For technical questions, contact: [e-mail]
SYMBOL
SYMBOL
SYMBOL
V
V
I
T(RMS)
dV/dt
I
I
dI/dt
I
I
T(TO)1
T(TO)2
V
RRM
T(AV)
DRM
TSM
Phase Control Thyristors
I
I
r
r
t
t
I
I
2
2
TM
t1
t2
H
d
q
L
(Hockey PUK Version),
t
√t
,
Gate drive 20 V, 20 Ω, t
T
Gate current 1 A, dI
V
I
V
T
T
180° conduction, half sine wave
Double side (single side) cooled
25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I
I
T
TM
pk
J
J
d
R
J
J
2310 A
= T
= 0.67 % V
= T
= T
= 25 °C, anode supply 12 V resistive load
= 8000 A, T
= 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, t
= 550 A, T
J
J
J
maximum linear to 80 % rated V
maximum, anode voltage ≤ 80 % V
maximum, rated V
T(AV)
T(AV)
), T
), T
DRM
J
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
T(AV)
T(AV)
J
= T
J
J
= T
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
= T
= T
, T
J
< I < π x I
< I < π x I
g
J
J
maximum, dI/dt = 40 A/µs,
/dt = 1 A/µs
J
J
maximum, t
= 25 °C
maximum
maximum
RRM
RRM
r
≤ 1 µs
DRM
T(AV)
T(AV)
Sinusoidal half wave,
initial T
/V
RRM
p
), T
), T
= 10 ms sine pulse
applied
J
J
J
= T
= T
= T
DRM
J
J
J
DRM
maximum
maximum
maximum
p
= 500 µs
Document Number: 93718
2310 (885)
VALUES
VALUES
VALUES
Revision: 11-Aug-08
55 (85)
42 500
44 500
35 700
37 400
90 270
0.077
0.068
4150
9027
8241
6383
5828
1000
1000
0.83
0.90
1.44
600
200
500
100
1.9
UNITS
UNITS
kA
UNITS
kA
A/µs
V/µs
mΩ
mA
°C
mA
µs
A
A
V
V
2
2
√s
s