ST103S08PFN1 Vishay, ST103S08PFN1 Datasheet - Page 8

• Manufacturer Part Number: ST103S08PFN1
• Description: SILICON CONTROLLED RECTIFIER,800V V(DRM),105A I(T),TO-209AC
• Manufacturer: Vishay

Specifications of ST103S08PFN1

• Breakover Current Ibo Max: 3150 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 30 mA
• Forward Voltage Drop: 1.73 V
• Gate Trigger Voltage (vgt): 3 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 200 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: Stud
• Package / Case: TO-94
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ST103SP Series
Document Number: 94365
Bulletin I25217 09/05
1E5
1E4
1E3
1E2
1E1
1E4
1E3
1E2
1E4
1E3
1E2
1E1
1E1
1E1
S nub ber c ircuit
R = 22 ohms
C
V = 80% V
S nub ber c ircuit
R = 22 ohms
C
V = 80% V
s
s
D
s
s
D
= 0.15 µF
= 0.15 µF
tp
10000
5000
DRM
DRM
5000
S T 103S S eries
S inusoidal pulse
1E2
Pulse Basewidth (µs)
2500
Pulse Basewidth (µs)
1E2
1E2
0.1
2500
Pulse Basewidth (µs)
0.2
1500
1500
0.5
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
1000
1
1000
2
3
tp
5
400
400
10
1E3
1E 3
1E 3
20 joules per pulse
Fig. 13 - Frequency Characteristics
Fig. 12 - Frequency Characteristics
S T 103S S eries
T ra p ezoidal pulse
T = 60°C
d i/d t = 50A/ µs
S T 103S S eries
T rapezoid al pulse
T = 60°C
di/ d t = 100A/ µs
C
C
200
200
100
100
50 Hz
50 Hz
1E4 1E 1
1E 4 1E1
1E 4
1E4
1E 4
1E 4
1E1
1E1
1E 1
1E 1
S nub ber c ircuit
R = 22 ohms
C = 0.15 µF
V = 80% V
S nub ber c ircuit
R = 22 ohms
C = 0.15 µF
V = 80% V
s
s
D
s
s
D
tp
10000
DRM
DRM
S T 103S S eries
Rectangula r pulse
di/ dt = 50A/ µs
5000
5000
Pulse Basewidth (µs)
2500
Pulse Basewidth (µs)
1E2
1E2
1E2
2500
Pulse Basewidth (µs)
1500
1500
0.1
0.2
1000
0.5
1000
1
2
tp
3
tp
400
400
5
1E3
1E3
1E3
10
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20 joules per p ulse
200
200
S T 103S S eries
T rapezoidal p ulse
T = 85°C
di/ d t = 50A/ µs
S T 103S S eries
T rapezoidal pulse
T = 85°C
di/ dt = 100A/ µs
C
C
100
100
50 Hz
50 Hz
8
1E 4
1E4
1E4