ST103S08PFN1 Vishay, ST103S08PFN1 Datasheet - Page 3

• Manufacturer Part Number: ST103S08PFN1
• Description: SILICON CONTROLLED RECTIFIER,800V V(DRM),105A I(T),TO-209AC
• Manufacturer: Vishay

Specifications of ST103S08PFN1

• Breakover Current Ibo Max: 3150 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 30 mA
• Forward Voltage Drop: 1.73 V
• Gate Trigger Voltage (vgt): 3 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 200 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: Stud
• Package / Case: TO-94
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 94365
Switching
On-state Conduction
Triggering
Blocking
di/dt
t
t
dv/dt
I
I
P
P
I
+V
-V
I
V
I
V
V
V
V
r
r
I
I
d
RRM
DRM
q
GM
GT
GD
H
L
t
t
GM
G(AV)
GT
GD
1
2
TM
T(TO)1
T(TO)2
GM
GM
Maximum peak gate power
Maximum average gate power
Max. peak positive gate current
Maximum peak positive
gate voltage
Maximum peak negative
gate voltage
Max. DC gate current required
to trigger
Max. DC gate voltage required
to trigger
Max DC gate current not to trigger
Max. DC gate voltage not to trigger
Maximum critical rate of rise of
off-state voltage
Max. peak reverse and off-state
leakage current
Parameter
Max. non-repetitive rate of rise
of turned-on current
Typical delay time
Max. turn-off time
Parameter
Max. peak on-state voltage
Low level value of threshold
voltage
High level value of threshold
voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum holding current
Typical latching current
Parameter
Parameter
Min
10
Values
Values
Values
Values
1000
1.32
1.73
0.25
1.35
600
1000
200
1.40
1.30
500
0.80
40
20
30
20
3
5
5
5
Max
25
Units
Units
Units
Units
A/µs
V/µs
mA
mΩ
mA
mA
mA
µs
W
V
V
A
V
V
T
T
T
T
Conditions
T
I
T
Resistive load, Gate pulse: 10V, 5Ω source
T
V
Conditions
T
I
(16.7% x π x I
(I > x π x I
(I > x π x I
T
T
T
available on request
T
Conditions
(16.7% x π x I
Conditions
TM
TM
J
J
J
J
J
J
J
J
R
J
J
J
J
= 25°C, V
= T
= T
= 25°C, V
= T
= T
= T
= T
= T
= T
= 300A, T
= 50V, t
= 25°C, I
= 25°C, V
= 2 x di/dt
J
J
J
J
J
J
J
J
max, I
max, f = 50Hz, d% = 50
max, t
max, V
max, t
max, rated V
max., linear to 80% V
max, rated V
T(AV)
T(AV)
p
DM
= 200µs, dv/dt: see table in device code
A
J
T
p
p
TM
T(AV)
T(AV)
= 12V, Ra = 6Ω
), T
), T
A
= T
DRM
= rated V
> 30A
= 12V, Ra = 6Ω, I
≤ 5ms
≤ 5ms
= 100A, commutating di/dt = 10A/µs
J
J
J
= rated V
< I < π x I
< I < π x I
= T
max, t
= T
DRM
DRM
J
J
max.
DRM
max.
applied
/V
p
= 10ms sine wave pulse
RRM
Bulletin I25217 09/05
ST103SP Series
, I
DRM
T(AV)
T(AV)
DRM
TM
applied
), T
), T
= 50A DC, t
, higher value
www.vishay.com
G
J
J
= 1A
= T
= T
J
J
max.
max.
p
= 1µs
3