SIR874DP-T1-GE3 Vishay, SIR874DP-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SIR874DP-T1-GE3
• Description: N-CHANNEL 25-V(D-S) MOSFET
• Manufacturer: Vishay

Specifications of SIR874DP-T1-GE3

• Gate Charge Qg: 27 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.012 Ohms
• Forward Transconductance Gfs (max / Min): 30 S
• Drain-source Breakdown Voltage: 25 V
• Continuous Drain Current: 20 A
• Power Dissipation: 29.8 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SO-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 64813
S09-0663-Rev. A, 20-Apr-09
36.0
28.8
21.6
14.4
7.2
0.0
0
25
Power Derating, Junction-to-Case
D
T
is based on T
C
50
- Case Temperature (°C)
75
46.0
36.8
27.6
18.4
J(max)
9.2
0.0
100
0
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
Package Limited
125
25
T
C
150
50
Current Derating*
- Case Temperature (°C)
75
100
2.20
1.76
1.32
0.88
0.44
0.00
125
0
150
Power Derating, Junction-to-Ambient
25
T
A
- Ambient Temperature (°C)
50
75
Vishay Siliconix
100
SiR874DP
www.vishay.com
125
150
5