SIR874DP-T1-GE3 Vishay, SIR874DP-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SIR874DP-T1-GE3
• Description: N-CHANNEL 25-V(D-S) MOSFET
• Manufacturer: Vishay

Specifications of SIR874DP-T1-GE3

• Gate Charge Qg: 27 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.012 Ohms
• Forward Transconductance Gfs (max / Min): 30 S
• Drain-source Breakdown Voltage: 25 V
• Continuous Drain Current: 20 A
• Power Dissipation: 29.8 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SO-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SiR874DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.2
- 0.4
- 0.6
- 0.8
0.01
100
0.4
0.2
0.0
0.1
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
T
0
J
- Source-to-Drain Voltage (V)
= 150 °C
0.4
Threshold Voltage
T
J
25
- Temperature (°C)
0.6
50
75
Limited by R
I
D
0.8
= 250 µA
T
0.01
J
100
100
0.1
10
= 25 °C
1
0.1
1.0
I
D
Safe Operating Area, Junction-to-Ambient
* V
DS(on)
= 5 mA
125
Single Pulse
T
GS
A
= 25 °C
> minimum V
*
1.2
150
V
DS
- Drain-to-Source Voltage (V)
1
GS
BVDSS Limited
at which R
DS(on)
0.05
0.04
0.03
0.02
0.01
0.00
10
80
64
48
32
16
0
0
0 .
0
is specified
0
1
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1 s
10 s
DC
1
2
V
0.01
100
GS
- Gate-to-Source Voltage (V)
3
4
Time (s)
0.1
S09-0663-Rev. A, 20-Apr-09
5
Document Number: 64813
6
7
1
T
T
J
J
8
= 125 °C
= 25 °C
9
10
1
0