SI9945BDY-T1-GE3 Vishay, SI9945BDY-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI9945BDY-T1-GE3
• Description: DUAL N-CHANNEL 60-V (D-S) MOSFET
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI9945BDY-T1-GE3

• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.058 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.3 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.058Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 64737
S09-0321-Rev. A, 02-Mar-09
100
10
1
0.000001
6
5
4
3
2
1
0
25
Single Pulse Avalanche Capability
50
D
0.00001
T
A
T
is based on T
C
- Time In Avalanche (s)
Current Derating*
- Case Temperature (°C)
75
J(max)
100
0.0001
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
New Product
0.001
150
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
T
C
- Case Temperature (°C)
50
Power Derating
75
Vishay Siliconix
Si9945BDY
100
www.vishay.com
125
150
5