SI9945BDY-T1-GE3 Vishay, SI9945BDY-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI9945BDY-T1-GE3
• Description: DUAL N-CHANNEL 60-V (D-S) MOSFET
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI9945BDY-T1-GE3

• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.058 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.3 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.058Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si9945BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
20
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
- Source-to-Drain Voltage (V)
0.4
Threshold Voltage
T
J
25
- Temperature (°C)
0.6
T
J
50
= 150 °C
0.8
I
D
75
= 250 µA
0.001
0.01
100
T
0.1
10
1.0
J
100
1
0.1
= 25 °C
Limited by
* V
1.2
125
GS
Single Pulse
T
A
New Product
> minimum V
V
= 25 °C
1.4
150
DS
R
DS(on)
- Drain-to-Source Voltage (V)
Safe Operating Area
1
*
GS
at which R
DS(on)
0.12
0.11
0.10
0.09
0.08
0.07
0.06
0.05
0.04
10
25
20
15
10
5
0
0.01
0
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.1
100 µs
1 ms
10 ms
100 ms
1 s
10 s
DC
2
V
100
GS
- Gate-to-Source Voltage (V)
4
1
Time (s)
S09-0321-Rev. A, 02-Mar-09
Document Number: 64737
10
6
I
D
= 4.3 A
100
8
1000
10