SI7802DN-T1-GE3 Vishay, SI7802DN-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI7802DN-T1-GE3
• Description: N-CHANNEL 250-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI7802DN-T1-GE3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 435 mOhm @ 1.95A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 1.24A
• Vgs(th) (max) @ Id: 3.6V @ 250µA
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7802DN-T1-GE3TR

Si7802DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
- 1.2
0.8
0.6
0.4
0.2
0.0
- 50
0.01
0.1
2
1
10
- 25
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
Threshold Voltage
T
J
I
D
25
- Temperature (°C)
= 250
10
-3
50
µA
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.001
0.01
100
0.1
10
10
1
0.1
-2
Limited by R
*
125
V
GS
Single Pulse
T
A
> minimum V
Limited
150
I
= 25 °C
D(on)
V
DS
Square Wave Pulse Duration (s)
DS(on)
1
Safe Operating Area
- Drain-to-Source Voltage (V)
10
*
-1
BV
GS
DSS
at which R
10
Limited
DS(on)
50
40
30
20
10
0
0.01
1
100
is specified
Single Pulse Power, Junction-to-Ambient
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
I
0.1
DM
1000
Limited
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
1
Time (s)
-
T
A
t
1
= P
S-83050-Rev. D, 29-Dec-08
t
Document Number: 73133
2
DM
Z
10
thJA
thJA
100
t
t
1
2
(t)
= 65 °C/W
100
600
600