SI7802DN-T1-GE3 Vishay, SI7802DN-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI7802DN-T1-GE3
• Description: N-CHANNEL 250-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI7802DN-T1-GE3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 435 mOhm @ 1.95A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 1.24A
• Vgs(th) (max) @ Id: 3.6V @ 250µA
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7802DN-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73133
S-83050-Rev. D, 29-Dec-08
0.50
0.46
0.42
0.38
0.34
0.30
10
20
10
8
6
4
2
0
1
0.0
0
0
Source-Drain Diode Forward Voltage
V
I
1
D
DS
0.2
On-Resistance vs. Drain Current
= 1.95 A
= 125 V
3
V
V
GS
SD
2
Q
= 6 V
g
- Source-to-Drain Voltage (V)
0.4
I
- Total Gate Charge (nC)
D
- Drain Current (A)
Gate Charge
3
6
0.6
4
V
T
GS
J
= 150 °C
9
= 10 V
5
0.8
6
T
J
12
= 25 °C
1.0
7
1.2
15
8
800
700
600
500
400
300
200
100
1.0
0.8
0.6
0.4
0.2
0.0
2.5
2.0
1.5
1.0
0.5
0.0
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
- 25
V
I
10
C
D
GS
oss
= 1.95 A
V
= 10 V
2
GS
V
T
20
DS
0
J
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
25
30
Capacitance
4
C
rss
40
50
Vishay Siliconix
C
iss
6
50
75
Si7802DN
I
D
= 1.95 A
www.vishay.com
100
60
8
125
70
150
10
80
3