SI7459DP-T1-GE3 Vishay, SI7459DP-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI7459DP-T1-GE3
• Description: P-CH 30-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI7459DP-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.8 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 170nC @ 10V
• Power - Max: 1.9W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7459DP-T1-GE3TR

Si7459DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.01
- 0.2
- 0.4
0.1
0.6
0.4
0.2
0.0
2
1
10
- 50
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
- 25
0
T
10
Threshold Voltage
J
- Temperature (°C)
-3
25
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
Single Pulse
Limited by
R
= 250 µA
50
DS(on)
0.01
100
75
*
0.1
10
1
0.1
10
* V
-2
100
GS
Single Pulse
> minimum V
T
C
125
V
= 25 °C
DS
Square Wave Pulse Duration (s)
- Drain-to-Source Voltage (V)
Safe Operating Area
150
1
10
GS
-1
at which R
DS(on)
10
is specified
1
200
160
120
80
40
0
0.001
1 ms
10 ms
100 ms
1 s
10 s
DC
100
10
0.01
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
Single Pulse Power
- T
t
A
1
= P
Time (s)
t
2
DM
S09-0273-Rev. D, 16-Feb-09
0.1
Z
thJA
Document Number: 72631
100
thJA
t
t
1
2
(t)
= 52 °C/W
1
600
10