SI7459DP-T1-GE3 Vishay, SI7459DP-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI7459DP-T1-GE3
• Description: P-CH 30-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI7459DP-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.8 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 170nC @ 10V
• Power - Max: 1.9W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7459DP-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72631
S09-0273-Rev. D, 16-Feb-09
0.010
0.008
0.006
0.004
0.002
0.000
100
10
0.1
10
8
6
4
2
0
1
0.00
0
0
Source-Drain Diode Forward Voltage
V
I
D
DS
On-Resistance vs. Drain Current
20
= 22 A
0.2
T
V
10
= 15 V
J
SD
= 150 °C
Q
g
- Source-to-Drain Voltage (V)
I
D
40
- Total Gate Charge (nC)
0.4
Gate Charge
- Drain Current (A)
20
V
60
0.6
GS
= 10 V
30
80
0.8
T
J
= 25 °C
40
100
1.0
120
1.2
50
10000
0.020
0.016
0.012
0.008
0.004
0.000
8000
6000
4000
2000
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
- 25
C
V
I
D
GS
rss
= 22 A
V
= 10 V
2
6
DS
T
V
J
0
GS
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
25
Capacitance
12
4
50
Vishay Siliconix
C
C
I
D
iss
oss
= 22 A
18
6
75
Si7459DP
www.vishay.com
100
24
8
125
150
10
30
3