SI7220DN-T1-GE3 Vishay, SI7220DN-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI7220DN-T1-GE3
• Description: DUAL N-CHANNEL 60-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI7220DN-T1-GE3

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8 Dual
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7220DN-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Notes:
The minimum creepage between D1 and D2 for this 100 V device is 0.2 mm. Please see PowerPAK 1212-8 outline drawing, document # 71656,
for more information.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73117.
Document Number: 73117
S-83052-Rev. C, 29-Dec-08
0.01
0.1
2
1
10
-4
Duty Cycle = 0.5
0.2
0.1
Single Pulse
0.02
0.05
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
Square Wave Pulse Duration (s)
10
-2
10
-1
Vishay Siliconix
Si7220DN
www.vishay.com
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