SI7220DN-T1-GE3 Vishay, SI7220DN-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI7220DN-T1-GE3
• Description: DUAL N-CHANNEL 60-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI7220DN-T1-GE3

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8 Dual
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7220DN-T1-GE3TR

Si7220DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
0.6
0.4
0.2
0.0
- 50
0.01
0.1
2
1
10
- 25
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
T
Threshold Voltage
J
- Temperature (°C)
25
10
Single Pulse
-3
50
I
D
= 250
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
µA
0.01
100
100
0.1
10
10
1
0.1
-2
Safe Operating Area, Junction-to-Ambient
125
* V
Limited by
Limited
GS
I
D(on)
> minimum V
150
Square Wave Pulse Duration (s)
V
DS
R
Single Pulse
T
DS(on)
- Drain-to-Source Voltage (V)
A
10
= 25 °C
1
-1
*
GS
at which R
BV
DSS
DS(on)
10
Limited
50
40
30
20
10
0
1
0.001
is specified
0.01
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
I
Limited
DM
100
Single Pulse Power
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0.1
P
DM
JM
Time (s)
-
T
t
A
1
= P
S-83052-Rev. C, 29-Dec-08
t
1
Document Number: 73117
2
DM
Z
thJA
thJA
100
t
t
1
2
(t)
10
= 77 °C/W
100
600
600