SI7212DN-T1-GE3 Vishay, SI7212DN-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI7212DN-T1-GE3
• Description: DUAL N-CHANNEL 30-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI7212DN-T1-GE3

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 36 mOhm @ 6.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.9A
• Vgs(th) (max) @ Id: 1.6V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8 Dual
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7212DN-T1-GE3TR

Si7212DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
0.4
0.2
0.0
- 50
0.01
0.1
2
1
10
- 25
-4
0.02
0.05
Duty Cycle = 0.5
0.2
0.1
0
Threshold Voltage
T
J
25
- Temperature (°C)
Single Pulse
10
-3
50
I
D
= 250
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
µA
100
0.1
10
100
1
0.1
10
-2
Limited by R
* V
Safe Operating Area, Junction-to-Ambient
125
Limited
I
GS
D(on)
> minimum V
150
V
Square Wave Pulse Duration (s)
Single Pulse
DS
T
A
DS(on)
- Drain-to-Source Voltage (V)
= 25 °C
1
10
*
-1
GS
BVDSS Limited
at which R
10
DS(on)
I
DM
50
40
30
20
10
0
1
Limited
0.001
is specified
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
0.01
100
Single Pulse Power
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0.1
P
DM
JM
-
Time (s)
T
t
A
1
= P
S09-1815-Rev. F, 14-Sep-09
1
t
2
Document Number: 73128
DM
Z
thJA
thJA
100
t
t
1
2
10
(t)
= 77 °C/W
100
600
600