SI7212DN-T1-E3 Vishay, SI7212DN-T1-E3 Datasheet

MOSFET DUAL N-CH 30V 1212-8

SI7212DN-T1-E3

Manufacturer Part Number
SI7212DN-T1-E3
Description
MOSFET DUAL N-CH 30V 1212-8
Manufacturer
Vishay
Series
TrenchFET®r
Datasheets

Specifications of SI7212DN-T1-E3

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
36 mOhm @ 6.8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
4.9A
Vgs(th) (max) @ Id
1.6V @ 250µA
Gate Charge (qg) @ Vgs
11nC @ 4.5V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8 Dual
Transistor Polarity
N Channel
Continuous Drain Current Id
6.8A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
39mohm
Rds(on) Test Voltage Vgs
12V
Threshold Voltage Vgs Typ
1.6V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI7212DN-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7212DN-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73128
S09-1815-Rev. F, 14-Sep-09
Single Pulse Avalanche Energy
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Single Pulse Avalanche Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
Ordering Information: Si7212DN-T1-E3 (Lead (Pb)-free)
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
V
DS
30
8
(V)
D1
3.30 mm
7
D1
6
PowerPAK
0.039 at V
0.036 at V
D2
5
R
D2
Si7212DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
DS(on)
Bottom View
GS
GS
®
1
J
a
(Ω)
1212-8
S1
= 4.5 V
= 10 V
= 150 °C)
a
Dual N-Channel 30-V (D-S) MOSFET
2
G1
3
S2
a
3.30 mm
4
I
G2
D
6.8
6.6
(A)
a
b, c
A
Q
= 25 °C, unless otherwise noted
g
Steady State
Steady State
L = 0.1 mH
T
T
T
T
(Typ.)
7
A
A
A
A
t ≤ 10 s
= 25 °C
= 85 °C
= 25 °C
= 85 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• 100 % R
• Space Savings Optimized for Fast Switching
• Compliant to RoHS Directive 2002/95/EC
• Synchronous Rectification
• Intermediate Driver
Symbol
Symbol
T
R
R
J
Definition
V
V
E
I
I
P
, T
I
DM
thJA
thJC
I
AS
DS
GS
AS
D
S
D
G
stg
1
N-Channel MOSFET
g
Tested
D
S
Typical
1
1
10 s
6.8
4.9
2.2
2.6
1.4
4.3
38
77
- 55 to 150
± 12
260
G
30
20
10
5
2
Steady State
N-Channel MOSFET
Maximum
0.69
4.9
3.5
1.1
1.3
5.4
48
94
Vishay Siliconix
D
S
2
2
Si7212DN
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
A
1

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SI7212DN-T1-E3 Summary of contents

Page 1

... Bottom View Ordering Information: Si7212DN-T1-E3 (Lead (Pb)-free) Si7212DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Single Pulse Avalanche Current Single Pulse Avalanche Energy ...

Page 2

... Si7212DN Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 73128 S09-1815-Rev. F, 14-Sep-09 1200 1000 °C J 0.8 1.0 1.2 1.4 Si7212DN Vishay Siliconix C iss 800 600 400 C oss 200 C rss Drain-to-Source Voltage (V) DS Capacitance 1 6 1.4 1.2 1.0 ...

Page 4

... Si7212DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0 0.0 - 0.2 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 = 250 µA 75 100 125 150 100 I Limited DS(on D(on) Limited °C A 0.1 ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73128. Document Number: 73128 S09-1815-Rev. F, 14-Sep- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si7212DN Vishay Siliconix - www.vishay.com 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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