SI5485DU-T1-GE3 Vishay, SI5485DU-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SI5485DU-T1-GE3
• Description: P CH MOSFET, -20V, 12A, POWERPAK
• Manufacturer: Vishay

Specifications of SI5485DU-T1-GE3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -12A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 42mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: -1.5V
• Configuration: Single Hex Drain
• Resistance Drain-source Rds (on): 0.025 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 8.8 A
• Power Dissipation: 3.1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK ChipFET
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si5485DU
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?73779.
www.vishay.com
6
0.01
0.1
0.1
1
1
10
10
-4
-4
0.2
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Duty Cycle = 0.5
0.02
0.05
10
-3
0.1
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
10
-2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-1
10
-2
1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
P
DM
-1
JM
- T
t
A
1
= P
S-81448-Rev. C, 23-Jun-08
t
2
Document Number: 73779
DM
100
Z
thJA
thJA
t
t
1
2
(t)
= 75 °C/W
1000
1