SI5485DU-T1-GE3 Vishay, SI5485DU-T1-GE3 Datasheet

P CH MOSFET, -20V, 12A, POWERPAK

SI5485DU-T1-GE3

Manufacturer Part Number
SI5485DU-T1-GE3
Description
P CH MOSFET, -20V, 12A, POWERPAK
Manufacturer
Vishay
Datasheet

Specifications of SI5485DU-T1-GE3

Transistor Polarity
P Channel
Continuous Drain Current Id
-12A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
42mohm
Rds(on) Test Voltage Vgs
12V
Threshold Voltage Vgs Typ
-1.5V
Configuration
Single Hex Drain
Resistance Drain-source Rds (on)
0.025 Ohms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
8.8 A
Power Dissipation
3.1 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PowerPAK ChipFET
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Document Number: 73779
S-81448-Rev. C, 23-Jun-08
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 90 °C/W.
Ordering Information: Si5485DU-T1-GE3 (Lead (Pb)-free and Halogen-free)
PRODUCT SUMMARY
V
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
DS
- 20
PowerPAK ChipFET Single
(V)
8
7
D
0.025 at V
0.042 at V
6
D
R
DS(on)
http://www.vishay.com/ppg?73257
D
5
Bottom View
D
S
GS
GS
D
1
= - 4.5 V
= - 2.5 V
(Ω)
D
J
2
= 150 °C)
S
b, f
3
G
P-Channel 20-V (D-S) MOSFET
4
I
- 12
- 12
D
(A)
a
a
Steady State
d, e
T
T
T
T
T
T
T
T
T
T
t ≤ 5 s
). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed
C
C
A
A
C
A
C
C
A
A
A
Q
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
g
14 nC
(Typ.)
Symbol
R
R
thJC
thJA
Symbol
T
J
V
V
I
P
, T
DM
I
I
DS
GS
D
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free
• TrenchFET
• New Thermally Enhanced PowerPAK
• Load Switch, Battery Switch, PA Switch and Charger
ChipFET
- Small Footprint Area
- Low On-Resistance
- Thin 0.8 mm profile
Switch
Marking Code
BE
Typical
34
®
3
XXX
Part #
Code
Package
®
Power MOSFET
Lot Traceability
and Date Code
- 55 to 150
- 8.8
- 7.1
- 2.6
3.1
Limit
- 12
- 12
± 12
- 20
- 30
- 12
2
260
31
20
b, c
b, c
b, c
b, c
b, c
a
a
Maximum
G
P-Channel MOSFET
40
Vishay Siliconix
4
®
Si5485DU
D
S
www.vishay.com
°C/W
Unit
RoHS
Unit
COMPLIANT
°C
W
V
A
1

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SI5485DU-T1-GE3 Summary of contents

Page 1

... Bottom View Ordering Information: Si5485DU-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) ...

Page 2

... Si5485DU Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Total Gate Charge (nC) g Gate Charge Document Number: 73779 S-81448-Rev. C, 23-Jun 2.0 2 Si5485DU Vishay Siliconix 125 ° ° 0.0 0.5 1.0 1 Gate-to-Source Voltage (V) GS Transfer Characteristics 1800 1500 1200 C iss 900 600 C oss 300 C rss Drain-to-Source Voltage (V) DS Capacitance 1 ...

Page 4

... Si5485DU Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 1.4 1.3 1 250 µA D 1.1 1.0 0.9 0.8 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.10 0.08 0.06 0. °C J 0.02 0.00 0.8 1 ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73779 S-81448-Rev. C, 23-Jun-08 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si5485DU Vishay Siliconix ...

Page 6

... Si5485DU Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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