SI4943CDY-T1-GE3 Vishay, SI4943CDY-T1-GE3 Datasheet - Page 3

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SI4943CDY-T1-GE3

Manufacturer Part Number
SI4943CDY-T1-GE3
Description
DUAL P-CHANNEL 20-V (D-S) MOSFET
Manufacturer
Vishay
Datasheet

Specifications of SI4943CDY-T1-GE3

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
19.2 mOhm @ 8.3A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
62nC @ 10V
Input Capacitance (ciss) @ Vds
1945pF @ 10V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.0192 Ohms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
8 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 50 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI4943CDY-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4943CDY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4943CDY-T1-GE3
Quantity:
70 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 69985
S09-0704-Rev. B, 27-Apr-09
0.08
0.06
0.04
0.02
0.00
10
30
24
18
12
8
6
4
2
0
6
0
On-Resistance vs. Drain Current and Gate Voltage
0
0
0
I
D
= 8.3 A
5
1
V
10
DS
Output Characteristics
Q
g
- Drain-to-Source Voltage (V)
10
I
- Total Gate Charge (nC)
D
Gate Charge
V
- Drain Current (A)
V
V
GS
DS
2
GS
V
GS
= 2 V
= 10 V
= 10 V thru 5 V
20
15
= 10 V
3
V
GS
20
= 4.5 V
V
V
V
DS
30
GS
GS
= 16 V
= 4 V
= 3 V
4
25
New Product
30
40
5
3000
2400
1800
1200
600
1.5
1.3
1.1
0.9
0.7
0
8
6
4
2
0
- 50
0
0
On-Resistance vs. Junction Temperature
C
- 25
rss
4
V
V
Transfer Characteristics
T
DS
GS
1
0
C
J
oss
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
Capacitance
25
V
8
GS
T
C
T
= 10 V, I
C
C
= 25 °C
iss
50
2
= 125 °C
Vishay Siliconix
V
12
GS
D
Si4943CDY
75
= 8.3 A
= 4.5 V, I
100
3
www.vishay.com
T
16
C
D
= - 55 °C
= 6.4 A
125
150
20
4
3

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