SI4943CDY-T1-GE3 Vishay, SI4943CDY-T1-GE3 Datasheet - Page 2

• Manufacturer Part Number: SI4943CDY-T1-GE3
• Description: DUAL P-CHANNEL 20-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI4943CDY-T1-GE3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 19.2 mOhm @ 8.3A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 62nC @ 10V
• Input Capacitance (ciss) @ Vds: 1945pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.0192 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 50 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4943CDY-T1-GE3TR

Si4943CDY
Vishay Siliconix
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
DS
GS(th)
Temperature Coefficient
Temperature Coefficient
a
b
b
a
J
= 25 °C, unless otherwise noted
b
ΔV
Symbol
ΔV
R
V
GS(th)
I
t
t
t
t
I
I
C
V
DS(on)
C
V
GS(th)
D(on)
C
Q
Q
d(on)
d(off)
d(on)
d(off)
I
GSS
DSS
Q
DS
g
Q
R
SM
I
t
t
t
t
t
DS
oss
t
t
SD
iss
rss
S
rr
gd
a
b
fs
gs
r
f
r
f
g
g
rr
/T
/T
J
J
V
I
V
F
I
I
New Product
DS
D
DS
V
D
V
= - 6.7 A, dI/dt = 100 A/µs, T
DS
≅ - 6.7 A, V
DS
≅ - 6.7 A, V
= - 10 V, V
= - 10 V, V
= - 20 V, V
V
V
= - 10 V, V
V
V
V
V
V
V
V
V
GS
DS
GS
DS
DS
DD
DD
GS
DS
DS
Test Conditions
= - 4.5 V, I
= V
= - 10 V, I
= - 10 V, I
= 0 V, V
= - 10 V, R
= - 10 V, R
= 0 V, I
= - 20 V, V
= 5 V, V
I
D
T
I
S
f = 1 MHz
GS
GEN
GS
GEN
C
= - 250 µA
GS
= - 6.7 A
GS
GS
= 25 °C
, I
= - 4.5 V, I
= - 10 V, I
D
D
= - 4.5 V, R
GS
= - 10 V, R
= 0 V, T
GS
= 0 V, f = 1 MHz
= - 250 µA
= - 250 µA
D
D
D
L
L
GS
= ± 20 V
= - 8.3 A
= - 10 V
= - 8.3 A
= - 6.4 A
= 1.5 Ω
= 1.5 Ω
= 0 V
J
D
D
= 55 °C
= - 8.3 A
J
= - 8.3 A
g
g
= 25 °C
= 1 Ω
= 1 Ω
Min.
- 20
- 30
0.5
- 1
0.0160
0.0275
Typ.
- 0.77
1945
- 21
460
385
5.4
2.5
19
41
20
13
11
35
10
50
71
29
15
30
17
13
17
7
9
S09-0704-Rev. B, 27-Apr-09
Document Number: 69985
a
0.0192
0.0330
Max.
- 100
- 2.5
- 1.2
- 10
107
- 30
- 3
- 1
62
30
20
17
53
15
75
44
23
45
26
5
mV/°C
Unit
nA
µA
nC
nC
pF
ns
ns
ns
Ω
Ω
V
V
A
S
A
V