SI4804CDY-T1-GE3 Vishay, SI4804CDY-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI4804CDY-T1-GE3
• Description: DUAL N-CHANNEL 30-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI4804CDY-T1-GE3

• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.022 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.1 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68924
S-82485-Rev. A, 13-Oct-08
4.0
3.2
2.4
1.6
0.8
0.0
0
25
D
T
Power, Junction-to-Foot
C
is based on T
- Case Temperature (°C)
50
75
J(max)
100
10
8
6
4
2
0
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
0
125
25
New Product
T
150
C
- Case Temperature (°C)
50
Current Derating*
75
100
1.5
1.2
0.9
0.6
0.3
0.0
125
0
Power Derating, Junction-to-Ambient
25
150
T
A
- Ambient Temperature (°C)
50
75
Vishay Siliconix
Si4804CDY
100
www.vishay.com
125
150
5