SI4804CDY-T1-E3 Vishay, SI4804CDY-T1-E3 Datasheet

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SI4804CDY-T1-E3

Manufacturer Part Number
SI4804CDY-T1-E3
Description
MOSFET 2N-CH 30V 8A SO8
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4804CDY-T1-E3

Input Capacitance (ciss) @ Vds
*
Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
22 mOhm @ 7.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
2.4V @ 250µA
Gate Charge (qg) @ Vgs
23nC @ 10V
Power - Max
3.1W
Mounting Type
*
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4804CDY-T1-E3
Manufacturer:
VISHAY
Quantity:
1 622
Part Number:
SI4804CDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Document Number: 68924
S-82485-Rev. A, 13-Oct-08
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 120 °C/W.
Ordering Information: Si4804CDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
30
(V)
C
G
S
G
S
= 25 °C.
1
2
2
1
0.027 at V
0.022 at V
1
2
3
4
R
DS(on)
Top View
GS
GS
SO-8
J
(Ω)
= 4.5 V
= 10 V
= 150 °C)
b, d
Dual N-Channel 30-V (D-S) MOSFET
8
7
6
5
I
D
D
D
D
D
7.9
1
1
2
2
(A)
8
Steady State
a
t ≤ 10 s
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
Q
= 25 °C, unless otherwise noted
g
(Typ.)
7
New Product
Symbol
R
R
thJA
thJF
Symbol
T
J
V
V
E
I
I
I
P
, T
DM
SM
I
I
AS
DS
GS
D
S
AS
D
FEATURES
APPLICATIONS
stg
• Halogen-free
• TrenchFET
• 100 % R
• 100 % UIS Tested
• DC/DC
• Notebook System Power
Typical
49
32
g
Tested
®
G
1
Power MOSFET
N-Channel MOSFET
- 55 to 150
1.28
7.1
5.5
1.8
Limit
± 20
2
D
8.0
7.1
2.4
3.1
S
30
30
30
10
b, c
5
2
1
1
b, c
b, c
b, c
b, c
Maximum
62.5
40
Vishay Siliconix
Si4804CDY
G
2
N-Channel MOSFET
www.vishay.com
D
S
2
2
°C/W
Unit
Unit
mJ
RoHS
°C
COMPLIANT
W
V
A
1

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SI4804CDY-T1-E3 Summary of contents

Page 1

... Top View Ordering Information: Si4804CDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy ...

Page 2

... Si4804CDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance ...

Page 3

... 0.0 3.2 6 Total Gate Charge (nC) g Gate Charge Document Number: 68924 S-82485-Rev. A, 13-Oct-08 New Product 1.5 2.0 2.5 1100 9.6 12.8 16.0 Si4804CDY Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss 880 660 440 C oss 220 C rss ...

Page 4

... Si4804CDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0.2 0 250 µ 0.4 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.10 0. ° ...

Page 5

... T - Case Temperature (°C) C Current Derating* 1.5 1.2 0.9 0.6 0.3 0.0 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si4804CDY Vishay Siliconix 125 150 100 125 T - Ambient Temperature (°C) A Power Derating, Junction-to-Ambient www.vishay.com ...

Page 6

... Si4804CDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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