SI4632DY-T1-E3 Vishay, SI4632DY-T1-E3 Datasheet - Page 6
![no-image](/images/manufacturer_photos/0/6/697/vishay_sml.jpg)
SI4632DY-T1-E3
Manufacturer Part Number
SI4632DY-T1-E3
Description
N-CHANNEL 25-V (D-S) MOSFET
Manufacturer
Vishay
Series
WFET®r
Datasheet
1.SI4632DY-T1-E3.pdf
(10 pages)
Specifications of SI4632DY-T1-E3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.7 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
40A
Vgs(th) (max) @ Id
2.6V @ 250µA
Gate Charge (qg) @ Vgs
161nC @ 10V
Input Capacitance (ciss) @ Vds
11175pF @ 15V
Power - Max
7.8W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0027 Ohms
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
27 A
Power Dissipation
3.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI4632DY-T1-E3TR
Si4632DY
Vishay Siliconix
TYPICAL CHARACTERISTICS T
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73786.
www.vishay.com
6
0.01
0.01
0.1
0.1
0.0001
1
1
10
-4
0.05
Duty Cycle = 0.5
0.1
0.02
Duty Cycle = 0.5
0.05
0.2
0.1
0.2
0.02
Single Pulse
10
-3
Single Pulse
0.001
Normalized Thermal Transient Impedance, Junction-to-Ambient
A
Normalized Thermal Transient Impedance, Junction-to-Foot
= 25 °C, unless otherwise noted
10
-2
Square Wave Pulse Duration (s)
0.01
Square Wave Pulse Duration (s)
10
-1
1
0.1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
S09-0228-Rev. B, 09-Feb-09
- T
Document Number: 73786
t
A
1
1
= P
t
2
DM
Z
thJA
thJA
100
t
t
1
2
(t)
= 60 °C/W
1000
10