SI4632DY-T1-E3 Vishay, SI4632DY-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI4632DY-T1-E3
• Description: N-CHANNEL 25-V (D-S) MOSFET
• Manufacturer: Vishay
• Series: WFET®r

Specifications of SI4632DY-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.7 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 2.6V @ 250µA
• Gate Charge (qg) @ Vgs: 161nC @ 10V
• Input Capacitance (ciss) @ Vds: 11175pF @ 15V
• Power - Max: 7.8W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0027 Ohms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 27 A
• Power Dissipation: 3.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4632DY-T1-E3TR

TYPICAL CHARACTERISTICS T
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73786
S09-0228-Rev. B, 09-Feb-09
10
8
6
4
2
0
0
25
D
Power, Junction-to-Foot
T
is based on T
C
50
- Case Temperature (°C)
75
J(max)
45
40
35
30
25
20
15
10
5
0
0
100
Package Limited
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
A
= 25 °C, unless otherwise noted
25
125
T
C
50
- Case Temperature (°C)
Current Derating*
150
75
100
125
2.0
1.6
1.2
0.8
0.4
0.0
0
150
25
Power, Junction-to-Ambient
T
A
– Ambient Temperature (°C)
50
75
Vishay Siliconix
100
Si4632DY
www.vishay.com
125
150
5