SI4622DY-T1-E3 Vishay, SI4622DY-T1-E3 Datasheet - Page 9

• Manufacturer Part Number: SI4622DY-T1-E3
• Description: DUAL N-CH 30-V (D-S) MOSFET W/SCHOTTKY
• Manufacturer: Vishay

Specifications of SI4622DY-T1-E3

• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8 A, 6.7 A
• Power Dissipation: 2.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68695
S-81442-Rev. A, 23-Jun-08
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.1
10
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
J
25
- Temperature (°C)
T
J
= 150 °C
0.6
50
Limited by R
0.01
75
100
0.1
10
0.8
1
0.1
T
I
D
J
100
= 25 °C
= 250 µA
Safe Operating Area, Junction-to-Ambient
* V
Single Pulse
T
A
GS
1.0
DS(on)
= 25 °C
125
> minimum V
V
*
New Product
DS
150
1.2
- Drain-to-Source Voltage (V)
1
GS
at which R
BVDSS
Limited
10
DS(on)
0.06
0.05
0.04
0.03
0.02
0.01
0.00
is specified
10
8
6
4
2
0
0
1 .
0
1 ms
10 ms
100 ms
1 s
10 s
100 µs
DC
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
100
V
1
GS
4
- Gate-to-Source Voltage (V)
Time (s)
10
8
Vishay Siliconix
Si4622DY
T
T
I
D
J
J
100
www.vishay.com
= 25 °C
= 125 °C
12
= 8.6 A
1
16
000
9