SI4622DY-T1-E3 Vishay, SI4622DY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4622DY-T1-E3
• Description: DUAL N-CH 30-V (D-S) MOSFET W/SCHOTTKY
• Manufacturer: Vishay

Specifications of SI4622DY-T1-E3

• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8 A, 6.7 A
• Power Dissipation: 2.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 68695
S-81442-Rev. A, 23-Jun-08
SPECIFICATIONS T
Parameter
Dynamic
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
a
J
a
= 25 °C, unless otherwise noted
Symbol
t
t
t
t
V
d(on)
d(off)
d(on)
d(off)
I
Q
SM
I
t
t
t
t
t
t
t
SD
S
rr
a
b
r
f
r
f
rr
I
I
F
F
New Product
I
I
= 7.7 A, dI/dt = 100 A/µs, T
I
I
= 5.3 A, dI/dt = 100 A/µs, T
D
D
D
D
≅ 7.7 A, V
≅ 5.3 A, V
≅ 7.7 A, V
≅ 5.3 A, V
V
V
V
V
DD
DD
DD
DD
= 15 V, R
= 15 V, R
= 15 V, R
= 15 V, R
T
Channel-1
Channel-2
Channel-1
Channel-2
Channel-1
Channel-2
I
GEN
GEN
GEN
GEN
S
Test Conditions
C
I
S
= 5.3 A
= 25 °C
= 2 A
= 4.5 V, R
= 4.5 V, R
= 10 V, R
= 10 V, R
L
L
L
L
= 2.8 Ω
= 2.8 Ω
= 2 Ω
= 2 Ω
g
g
g
g
J
J
= 1 Ω
= 1 Ω
= 1 Ω
= 1 Ω
= 25 °C
= 25 °C
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Min.
Vishay Siliconix
Typ.
0.57
0.8
14
10
25
17
27
14
15
12
29
21
11
11
26
17
15
13
10
13
8
8
9
8
8
7
Si4622DY
www.vishay.com
Max.
0.68
2.8
2.6
1.2
21
16
16
20
38
26
18
15
35
21
23
18
44
32
17
17
60
30
39
26
23
16
Unit
nC
ns
ns
ns
A
V
3