SI4561DY-T1-E3 Vishay, SI4561DY-T1-E3 Datasheet - Page 9

• Manufacturer Part Number: SI4561DY-T1-E3
• Description: TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,40V V(BR)DSS,7.2A I(D),SO
• Manufacturer: Vishay

Specifications of SI4561DY-T1-E3

• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.0355 Ohms, 0.035 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.6 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 69730
S-80109-Rev. B, 21-Jan-08
- 0.1
- 0.3
100
0.7
0.5
0.3
0.1
10
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
0.3
V
SD
T
0
J
Threshold Voltage
- Source-to-Drain Voltage (V)
= 150 °C
T
J
- Temperature (°C)
25
0.6
50
I
D
0.9
= 250 µA
75
T
0.01
100
J
0.1
100
10
= 25 °C
1
0.1
1.2
I
D
Limited by r
Safe Operating Area, Junction-to-Ambient
Single Pulse
* V
= 5 mA
125
T
A
GS
= 25 °C
New Product
> minimum V
150
1.5
V
DS
DS(on)
- Drain-to-Source Voltage (V)
1
*
GS
at which r
0.12
0.09
0.06
0.03
10
100
DS(on)
80
60
40
20
0
0
0
0 .
0
0
is specified
1
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1 s
10 s
DC
2
V
0.01
100
GS
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
Vishay Siliconix
6
Si4561DY
T
1
I
T
www.vishay.com
A
D
A
= 125 °C
= 5 A
8
= 25 °C
10
1
0
9