SI4561DY-T1-E3 Vishay, SI4561DY-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI4561DY-T1-E3
• Description: TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,40V V(BR)DSS,7.2A I(D),SO
• Manufacturer: Vishay

Specifications of SI4561DY-T1-E3

• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.0355 Ohms, 0.035 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.6 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 69730
S-80109-Rev. B, 21-Jan-08
0.001
- 0.2
- 0.4
- 0.6
- 0.8
0.01
100
0.4
0.2
0.0
0.1
10
- 50
1
0.0
I
D
= 5 mA
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
- Source-to-Drain Voltage (V)
I
T
D
Threshold Voltage
0.4
J
= 250 µA
- Temperature (°C)
25
T
J
= 150 °C
0.6
50
75
0.8
0.01
100
100
0.1
10
T
1
0.1
J
= 25 °C
1.0
Limited by r
Safe Operating Area, Junction-to-Ambient
Single Pulse
* V
125
T
A
GS
= 25 °C
New Product
> minimum V
150
V
1.2
DS
DS(on)
- Drain-to-Source Voltage (V)
1
*
GS
at which r
DS(on)
10
0.20
0.16
0.12
0.08
0.04
80
64
48
32
16
0
0
0
0
0 .
is specified
0
1
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
10 ms
100 ms
1 ms
1 s
10 s
DC
V
2
GS
0.01
100
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
Vishay Siliconix
6
Si4561DY
www.vishay.com
T
T
I
1
A
D
A
= 125 °C
= 5 A
8
= 25 °C
10
1
0
5